"Characteristics of metal-oxide-semiconductor (MOS) device with Er metal ..."

Chel-Jong Choi et al. (2009)

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DOI: 10.1016/J.MICROREL.2008.12.014

access: closed

type: Journal Article

metadata version: 2020-02-22

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Chel-Jong Choi, Ha-Yong Yang, Hyo-Bong Hong, Jin-Gyu Kim, Sung-Yong Chang, Jouhahn Lee:
Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO₂ film. Microelectron. Reliab. 49(4): 463-465 (2009)

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