"Gate oxide breakdown characterization on 0.13mum CMOS technology."

D. Faure et al. (2003)

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DOI: 10.1016/S0026-2714(03)00269-5

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type: Journal Article

metadata version: 2020-02-22

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D. Faure, D. Bru, C. Ali, C. Giret, K. Christensen:
Gate oxide breakdown characterization on 0.13mum CMOS technology. Microelectron. Reliab. 43(9-11): 1519-1523 (2003)

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