"Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on ..."

Clément Fleury et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.07.117

access: closed

type: Journal Article

metadata version: 2024-05-07

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Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany:
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53(9-11): 1444-1449 (2013)

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