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Microelectronics Reliability, Volume 53
Volume 53, Number 1, January 2013
- C. Robert Kao
, Albert T. Wu, King-Ning Tu, Yi-Shao Lai:
Reliability of micro-interconnects in 3D IC packages. 1 - King-Ning Tu, Hsiang-Yao Hsiao, Chih Chen:
Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy. 2-6 - Cheng-Ta Ko, Kuan-Neng Chen
:
Reliability of key technologies in 3D integration. 7-16 - Thomas Frank, Stéphane Moreau
, Cédrick Chappaz, Patrick Leduc, Lucile Arnaud, Aurélie Thuaire
, Emmanuel Chery
, F. Lorut, Lorena Anghel
, Gilles Poupon:
Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric. 17-29 - Wen-Hwa Chen, Ching-Feng Yu, Hsien-Chie Cheng, Yu-min Tsai, Su-Tsai Lu:
IMC growth reaction and its effects on solder joint thermal cycling reliability of 3D chip stacking packaging. 30-40 - Y. W. Chang, H. Y. Peng, R. W. Yang, Chih Chen, T. C. Chang, Chau-Jie Zhan, Jin-Ye Juang, Annie T. Huang:
Analysis of bump resistance and current distribution of ultra-fine-pitch microbumps. 41-46 - Y. J. Chen, C. K. Chung, C. R. Yang, C. Robert Kao
:
Single-joint shear strength of micro Cu pillar solder bumps with different amounts of intermetallics. 47-52 - Tengfei Jiang, Suk-Kyu Ryu, Qiu Zhao, Jay Im, Rui Huang, Paul S. Ho:
Measurement and analysis of thermal stresses in 3D integrated structures containing through-silicon-vias. 53-62 - Anirudh Udupa
, Ganesh Subbarayan, Cheng-Kok Koh:
Analytical estimates of stress around a doubly periodic arrangement of through-silicon vias. 63-69 - Xi Liu, Qiao Chen, Venkatesh Sundaram, Rao R. Tummala, Suresh K. Sitaraman:
Failure analysis of through-silicon vias in free-standing wafer under thermal-shock test. 70-78 - Yu-Lin Shen, R. W. Johnson:
Misalignment induced shear deformation in 3D chip stacking: A parametric numerical assessment. 79-89
- Adelmo Ortiz-Conde
, Francisco J. García-Sánchez
, Juan Muci, Alberto Terán Barrios, Juin J. Liou, Ching-Sung Ho:
Revisiting MOSFET threshold voltage extraction methods. 90-104
- Saurabh Kothawade, Koushik Chakraborty:
Analysis and mitigation of BTI aging in register file: An application driven approach. 105-113 - Nihaar N. Mahatme, Indranil Chatterjee
, Akash Patki, Daniel B. Limbrick
, Bharat L. Bhuva, Ronald D. Schrimpf
, William H. Robinson
:
An efficient technique to select logic nodes for single event transient pulse-width reduction. 114-117 - Yue Xu, Chun-bo Wu, Xiaoli Ji, Feng Yan, Yi Shi:
An improved multilevel cell programming technique for 4-bits/cell localized trapping SONOS memory devices. 118-122 - Zhouying Zhao, Lynn Rice, Harry Efstathiadis, Pradeep Haldar:
Annealing and thickness related performance and degradation of polymer solar cells. 123-128 - Jianguang Chen, Liang Feng, Yuhua Cheng:
Research and design of a power management chip for wireless powering capsule endoscopy. 129-135 - Chien-Yi Huang:
Reliability assessment of RFID reader through prognostics and health management. 136-144 - Toru Ikeda, Toshifumi Kanno, Nobuyuki Shishido, Noriyuki Miyazaki, Hiroyuki Tanaka, Takuya Hatao:
Non-linear analyses of strain in flip chip packages improved by the measurement using the digital image correlation method. 145-153 - B. Li, X. P. Zhang, Y. Yang, L. M. Yin, Michael G. Pecht
:
Size and constraint effects on interfacial fracture behavior of microscale solder interconnects. 154-163 - Yap Boon Kar
, Tan Cai Hui, Ramasamy Agileswari, Calvin Lo:
Comparison study on reliability performance for polymer core solder balls under multiple reflow and HTS stress tests. 164-173 - Xin Li, Gang Chen, Xu Chen, Guo-Quan Lu, Lei Wang, Yun-Hui Mei
:
High temperature ratcheting behavior of nano-silver paste sintered lap shear joint under cyclic shear force. 174-181
Volume 53, Number 2, February 2013
- Vesselin K. Vassilev:
Advances in ESD protection for ICs. 183 - Timothy J. Maloney:
HBM tester waveforms, equivalent circuits, and socket capacitance. 184-189 - Theo Smedes, M. Polewski, A. van IJzerloo, Jean Luc Lefebvre, M. Dekker:
Pitfalls for CDM calibration procedures. 190-195 - Yuanzhong Paul Zhou, David Ellis, Jean-Jacques Hajjar, Andrew Olney, Juin J. Liou:
vfTLP-VTH: A new method for quantifying the effectiveness of ESD protection for the CDM classification test. 196-204 - Kil-Ho Kim, Yong-Jin Seo:
Electrostatic discharge (ESD) protection of N-type silicon controlled rectifier with P-type MOSFET pass structure for high voltage operating I/O application. 205-207 - Chih-Ting Yeh, Ming-Dou Ker:
PMOS-based power-rail ESD clamp circuit with adjustable holding voltage controlled by ESD detection circuit. 208-214 - Mototsugu Okushima, Junji Tsuruta:
Secondary ESD clamp circuit for CDM protection of over 6 Gbit/s SerDes application in 40 nm CMOS. 215-220 - Nicolas Monnereau, Fabrice Caignet, David Trémouilles
, Nicolas Nolhier, Marise Bafleur:
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation. 221-228
- Vincent Fiori, Sébastien Gallois-Garreignot, Hervé Jaouen
, Clément Tavernier:
Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond. 229-235 - Rajni Gautam
, Manoj Saxena
, R. S. Gupta, Mridula Gupta:
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter. 236-244 - Syed Askari, Mehrdad Nourani:
An on-chip sensor to measure and compensate static NBTI-induced degradation in analog circuits. 245-253 - S. L. Jang, Jiann-Shiun Yuan, S. D. Yen, E. Kritchanchai, G. W. Huang:
Experimental evaluation of hot electron reliability on differential Clapp-VCO. 254-258 - Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou:
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. 259-264 - Wen-Kuan Yeh, Po-Ying Chen, Kwang-Jow Gan, Jer-Chyi Wang
, Chao-Sung Lai
:
The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET. 265-269 - Durga Misra, Jyothi Kasinath, Arun N. Chandorkar:
Voltage and current stress induced variations in TiN/HfSixOy/TiN MIM capacitors. 270-273 - Jacques Tardy, Mohsen Erouel
:
Stability of pentacene transistors under concomitant influence of water vapor and bias stress. 274-278 - Laura Ciammaruchi
, Stefano Penna
, Andrea Reale
, Thomas M. Brown
, Aldo Di Carlo
:
Acceleration factor for ageing measurement of dye solar cells. 279-281 - Luowei Zhou, Shengqi Zhou, Mingwei Xu:
Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off. 282-287 - Huang-Kuang Kung, Hung-Shyong Chen, Ming-Cheng Lu:
The wire sag problem in wire bonding technology for semiconductor packaging. 288-296 - Tong Hong Wang, Ching-I Tsai, Chang-Chi Lee, Yi-Shao Lai:
Study of factors affecting warpage of HFCBGA subjected to reflow soldering-liked profile. 297-302 - Venkatesh Arasanipalai Raghavan, Brian Roggeman, Michael Meilunas, Peter Borgesen:
Effects of 'Latent Damage' on pad cratering: Reduction in life and a potential change in failure mode. 303-313 - Hironori Tohmyoh, Shoho Ishikawa, Satoshi Watanabe, Motohisa Kuroha, Yoshikatsu Nakano:
Estimation and visualization of the fatigue life of Pb-free SAC solder bump joints under thermal cycling. 314-320 - Qinghua Zhao, Anmin Hu, Ming Li, Jiangyan Sun:
Effect of electroplating layer structure on shear property and microstructure of multilayer electroplated Sn-3.5Ag solder bumps. 321-326 - Yang Yang, Yongzhi Li, Hao Lu, Chun Yu, Junmei Chen:
Interdiffusion at the interface between Sn-based solders and Cu substrate. 327-333 - C. Y. Khor
, Mohd Zulkifly Abdullah:
Analysis of fluid/structure interaction: Influence of silicon chip thickness in moulded packaging. 334-347
Volume 53, Number 3, March 2013
- Ganesh C. Patil
, Shafi Qureshi:
Engineering buried oxide in dopant-segregated Schottky barrier SOI MOSFET for nanoscale CMOS circuits. 349-355 - Vladimír Kosel, Stefano de Filippis, Liu Chen, Stefan Decker, Andrea Irace
:
FEM simulation approach to investigate electro-thermal behavior of power transistors in 3-D. 356-362 - Abhijit Biswas, Swagata Bhattacherjee
:
Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs. 363-370 - Jie Chen, Zhengwei Du:
Device simulation studies on latch-up effects in CMOS inverters induced by microwave pulse. 371-378 - Naushad Alam
, Bulusu Anand, Sudeb Dasgupta:
The impact of process-induced mechanical stress on CMOS buffer design using multi-fingered devices. 379-385 - Sung-Jae Chang, Maryline Bawedin, Wade Xiong, Jong-Hyun Lee, Jung-Hee Lee, Sorin Cristoloveanu:
Remote carrier trapping in FinFETs with ONO buried layer: Temperature effects. 386-393 - N. Lukyanchikova, N. Garbar, Valeriya Kudina
, A. Smolanka, Eddy Simoen, Cor Claeys:
Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry. 394-399 - Liqiang Han, Suying Yao, Jiangtao Xu, Chao Xu:
Characteristics of random telegraph signal noise in time delay integration CMOS image sensor. 400-404 - Hsien-Chin Chiu
, Chao-Wei Lin, Fan-Hsiu Huang, Hsuan-Ling Kao
, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau:
Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate. 405-408 - Guoxuan Qin, Guogong Wang, Ningyue Jiang, Jianguo Ma, Zhenqiang Ma
:
On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions. 409-413 - Zlatica Marinkovic
, Nenad Ivkovic, Olivera Pronic-Rancic
, Vera Markovic, Alina Caddemi
:
Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors. 414-419 - Chao-Wei Tang, Kuan-Ming Li
, Mike Yang, Hsueh-Chuan Liao, Hong-Tsu Young
:
Improving the dielectric breakdown field of silicon light-emitting-diode sub-mount by a hybrid nanosecond laser drilling strategy. 420-427 - Mika Maaspuro, Aulis Tuominen:
Thermal analysis of LED spot lighting device operating in external natural or forced heat convection. 428-434 - Bong-Min Song, Bongtae Han
, Joon-Hyun Lee:
Optimum design domain of LED-based solid state lighting considering cost, energy consumption and reliability. 435-442 - Artur Wymyslowski, Lukasz Dowhan:
Application of nanoindentation technique for investigation of elasto-plastic properties of the selected thin film materials. 443-451 - P. Jesudoss, Alan Mathewson, W. M. D. Wright, Frank A. Stam
:
Mechanical assessment of an anisotropic conductive adhesive joint of a direct access sensor on a flexible substrate for a swallowable capsule application. 452-462 - Jong-Ning Aoh
, Cheng-Li Chuang, Min-Yi Kang:
Reliability of TCT and HH/HT test performed in chips and flex substrates assembled by thermosonic flip-chip bonding process. 463-472 - Vemal Raja Manikam, Khairunisak Abdul Razak
, Kuan Yew Cheong
:
Reliability of sintered Ag80-Al20 die attach nanopaste for high temperature applications on SiC power devices. 473-480 - Anupama Tiwari, Dilip Roy:
Estimation of reliability of mobile handsets using Cox-proportional hazard model. 481-487 - Aiwu Ruan, Shi Kang, Yu Wang, Xiao Han, Zujian Zhu, Yongbo Liao, Peng Li:
A Built-In Self-Test (BIST) system with non-intrusive TPG and ORA for FPGA test and diagnosis. 488-498
- D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar:
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics. 499-504 - Kong-Pang Pun, Lei Sun, Bing Li:
Unit capacitor array based SAR ADC. 505-508 - Seung Eun Lee:
Adaptive error correction in Orthogonal Latin Square Codes for low-power, resilient on-chip interconnection network. 509-511
Volume 53, Number 4, April 2013
- Hakim Tahi
, Boualem Djezzar
, Abdelmadjid Benabdelmoumene
:
A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues. 513-519 - Toufik Bentrcia, Fayçal Djeffal, M. Chahdi:
An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects. 520-527 - Jun-Hyuk Seo, Ji-Young Kim, Young-Bae Kim, Dong-Wook Kim
, Haeri Kim, Hyun Cho, Duck-Kyun Choi:
Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide. 528-532 - Narjes Moghadam, Mohammad Kazem Moravvej-Farshi
, Mohammad Reza Aziziyan
:
Design and simulation of MOSCNT with band engineered source and drain regions. 533-539 - Mahdiar Hosein Ghadiry, Mahdieh Nadi Senjani
, M. Bahadoran, Asrulnizam Bin Abd Manaf
, H. Karimi, Hatef Sadeghi
:
An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors. 540-543 - Xingming Long
, Rui-Jin Liao, Jing Zhou, Zhi Zeng:
Thermal uniformity of packaging multiple light-emitting diodes embedded in aluminum-core printed circuit boards. 544-553 - Han-Kuei Fu, Chien-Ping Wang, Hsin-Chien Chiang, Tzung-Te Chen, Chiu-Ling Chen, Pei-Ting Chou:
Evaluation of temperature distribution of LED module. 554-559 - V. S. Balderrama
, Magali Estrada, Aurelien Viterisi, Pilar Formentin, Josep Pallarès, Josep Ferré-Borrull
, Emilio Palomares
, Lluís F. Marsal
:
Correlation between P3HT inter-chain structure and Jsc of P3HT: PC[70]BM blends for solar cells. 560-564 - Jawar Singh
, Narayanan Vijaykrishnan:
A highly reliable NBTI Resilient 6T SRAM cell. 565-572 - Orazio Aiello
, Franco Fiori:
A new MagFET-based integrated current sensor highly immune to EMI. 573-581 - Adam Golda, Andrzej Kos:
Optimum control of microprocessor throughput under thermal and energy saving constraints. 582-591 - Anindya Jana, Nameirakpam Basanta Singh
, J. K. Sing, Subir Kumar Sarkar:
Design and simulation of hybrid CMOS-SET circuits. 592-599 - Ernest E. S. Ong
, Mohd Zulkifly Abdullah
, W. K. Loh, C. K. Ooi, R. Chan:
FSI implications of EMC rheological properties to 3D IC with TSV structures during plastic encapsulation process. 600-611 - Masaki Omiya, Kozo Koiwa, Nobuyuki Shishido, Shoji Kamiya, Chuantong Chen
, Hisashi Sato, Masahiro Nishida
, Takashi Suzuki, Tomoji Nakamura, Toshiaki Suzuki, Takeshi Nokuo:
Experimental and numerical evaluation of interfacial adhesion on Cu/SiN in LSI interconnect structures. 612-621 - Xinjun Sheng
, Lei Jia, Zhenhua Xiong, Zhiping Wang, Han Ding:
ACF-COG interconnection conductivity inspection system using conductive area. 622-628 - Yao Yao
, Leon M. Keer:
Cohesive fracture mechanics based numerical analysis to BGA packaging and lead free solders under drop impact. 629-637 - Seong-Hun Na, Seung-Kyu Lim, Jin-Soo Kim, Hwa-Sun Park, Heung-Jae Oh, Jin-Won Choi, Su-Jeong Suh:
Experimental study of bump void formation according to process conditions. 638-644 - Gang Chen, Ze-Sheng Zhang, Yun-Hui Mei
, Xin Li, Guo-Quan Lu, Xu Chen:
Ratcheting behavior of sandwiched assembly joined by sintered nanosilver for power electronics packaging. 645-651 - Qinghua Wang
, Satoshi Kishimoto, Huimin Xie, Zhanwei Liu
, Xinhao Lou:
In situ high temperature creep deformation of micro-structure with metal film wire on flexible membrane using geometric phase analysis. 652-657
Volume 53, Number 5, May 2013
- Ryuji Tomita, Hidehiko Kimura, M. Yasuda, K. Maeda, S. Ueno, T. Tomizawa, Y. Kunimune, H. Nakamura, M. Moritoki, Hiroshi Iwai:
Formation of high resistivity phases of nickel silicide at small area. 659-664 - Ryuji Tomita, Hidehiko Kimura, M. Yasuda, K. Maeda, S. Ueno, T. Tonegawa, T. Fujimoto, M. Moritoki, Hiroshi Iwai:
Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions. 665-669 - Behrouz Afzal, Behzad Ebrahimi
, Ali Afzali-Kusha, Hamid Mahmoodi
:
An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities. 670-675 - A. A. Dakhel
, W. E. Alnaser
:
Experimental analysis of Ga2O3: Ti films grown on Si and glass substrates. 676-680 - Libor Pína, Jan Vobecký:
High-power silicon P-i-N diode with cathode shorts: The impact of electron irradiation. 681-686 - Lingli Jiang, Hang Fan, Ming Qiao, Bo Zhang
, Zhaoji Li:
ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications. 687-693 - Yamin Zhang
, Shiwei Feng, Hui Zhu, Jianwei Zhang, Bing Deng:
Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs. 694-700 - Keng Chen, Nadarajah Narendran:
Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis. 701-705 - Viviana Mulloni
, Francesco Solazzi, F. Ficorella, A. Collini, Benno Margesin:
Influence of temperature on the actuation voltage of RF-MEMS switches. 706-711 - J. Assaf:
Extraction of noise spectral densities(intrinsic and irradiation contributions) of a charge preamplifier based on JFET. 712-717 - Naushad Alam
, Bulusu Anand, Sudeb Dasgupta:
The impact of process-induced mechanical stress in narrow width devices and variable-taper CMOS buffer design. 718-724 - Qianwen Chen, Wuyang Yu, Cui Huang, Zhimin Tan, Zheyao Wang:
Reliability of through-silicon-vias (TSVs) with benzocyclobutene liners. 725-732 - H. X. Xie, Nikhilesh Chawla
:
Mechanical shock behavior of Sn-3.9Ag-0.7Cu and Sn-3.9Ag-0.7Cu-0.5Ce solder joints. 733-740 - Shoho Ishikawa, Hironori Tohmyoh, Satoshi Watanabe, Tomonori Nishimura, Yoshikatsu Nakano:
Extending the fatigue life of Pb-free SAC solder joints under thermal cycling. 741-747 - Xiao-feng Wei, Yu-kun Zhang, Ri-chu Wang, Yan Feng:
Microstructural evolution and shear strength of AuSn20/Ni single lap solder joints. 748-754 - Balázs Illés
, Barbara Horváth
:
Whiskering behaviour of immersion tin surface coating. 755-760 - Didier Chicot
, K. Tilkin, K. Jankowski, Artur Wymyslowski:
Reliability analysis of solder joints due to creep and fatigue in microelectronic packaging using microindentation technique. 761-766 - Chenglong Liao, Dan Guo, Shizhu Wen, Xinchun Lu, Jianbin Luo
:
Stress analysis of Cu/low-k interconnect structure during whole Cu-CMP process using finite element method. 767-773 - Peter Filipp Fuchs
, Gerald Pinter
, Zoltan Major:
PCB drop test lifetime assessment based on simulations and cyclic bend tests. 774-781
Volume 53, Number 6, June 2013
- Qiang Miao:
Enabling technologies for sustainable battery: Advances in battery reliability. 783 - Laurent Gagneur, Ana Lucia Driemeyer-Franco, Christophe Forgez, Guy Friedrich:
Modeling of the diffusion phenomenon in a lithium-ion cell using frequency or time domain identification. 784-796 - Weilin Luo, Chao Lyu, Lixin Wang, Liqiang Zhang
:
An approximate solution for electrolyte concentration distribution in physics-based lithium-ion cell models. 797-804 - Qiang Miao, Lei Xie, Hengjuan Cui, Wei Liang, Michael G. Pecht
:
Remaining useful life prediction of lithium-ion battery with unscented particle filter technique. 805-810 - Yinjiao Xing, Eden W. M. Ma, Kwok-Leung Tsui
, Michael G. Pecht
:
An ensemble model for predicting the remaining useful performance of lithium-ion batteries. 811-820 - Bing Long, Weiming Xian, Lin Jiang, Zhen Liu:
An improved autoregressive model by particle swarm optimization for prognostics of lithium-ion batteries. 821-831 - Datong Liu, Jingyue Pang, Jianbao Zhou, Yu Peng, Michael G. Pecht
:
Prognostics for state of health estimation of lithium-ion batteries based on combination Gaussian process functional regression. 832-839 - Wei He, Nicholas Williard
, Chaochao Chen, Michael G. Pecht
:
State of charge estimation for electric vehicle batteries using unscented kalman filtering. 840-847
- Michelly de Souza
, Bruna Cardoso Paz, Denis Flandre
, Marcelo Antonio Pavanello:
Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs. 848-855