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"Study of hot-carrier effects on power RF LDMOS device reliability."

M. Gares et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.07.064

access: closed

type: Journal Article

metadata version: 2022-10-02

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M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline:
Study of hot-carrier effects on power RF LDMOS device reliability. Microelectron. Reliab. 47(9-11): 1394-1399 (2007)

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