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"Considerations for evaluating hot-electron reliability of strained Si ..."

David Q. Kelly et al. (2005)

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DOI: 10.1016/J.MICROREL.2005.01.011

access: closed

type: Journal Article

metadata version: 2021-10-27

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David Q. Kelly, Sagnik Dey, David Onsongo, Sanjay K. Banerjee:
Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs. Microelectron. Reliab. 45(7-8): 1033-1040 (2005)

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