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"Trapped charge and stress induced leakage current (SILC) in tunnel ..."
Mario Lanza et al. (2009)
- Mario Lanza, Marc Porti
, Montserrat Nafría
, Xavier Aymerich
, G. Ghidini, A. Sebastiani:
Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectron. Reliab. 49(9-11): 1188-1191 (2009)
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