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"Leakage current mechanism and effect of Y2O3 doped ..."

K. C. Lin et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.07.045

access: closed

type: Journal Article

metadata version: 2022-10-20

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K. C. Lin, P. C. Juan, C. H. Liu, Mu-Chun Wang, C. H. Chou:
Leakage current mechanism and effect of Y₂O₃ doped with Zr high-K gate dielectrics. Microelectron. Reliab. 55(11): 2198-2202 (2015)

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