"Trench insulated gate bipolar transistors submitted to high temperature ..."

Cheick Oumar Maïga et al. (2005)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2005.07.098

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/MaigaTTB05
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/MaigaTTB05
Cheick Oumar Maïga, Hamid Toutah, Boubekeur Tala-Ighil, Bertrand Boudart:
Trench insulated gate bipolar transistors submitted to high temperature bias stress. Microelectron. Reliab. 45(9-11): 1728-1731 (2005)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.