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"Trench insulated gate bipolar transistors submitted to high temperature ..."

Cheick Oumar Maïga et al. (2005)

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DOI: 10.1016/J.MICROREL.2005.07.098

access: closed

type: Journal Article

metadata version: 2020-02-22

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Cheick Oumar Maïga, Hamid Toutah, Boubekeur Tala-Ighil, Bertrand Boudart:
Trench insulated gate bipolar transistors submitted to high temperature bias stress. Microelectron. Reliab. 45(9-11): 1728-1731 (2005)

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