"Pre-breakdown noise in electrically stressed thin SiO2 layers ..."

Marc Porti et al. (2003)

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DOI: 10.1016/S0026-2714(03)00173-2

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type: Journal Article

metadata version: 2020-02-22

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Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Pre-breakdown noise in electrically stressed thin SiO₂ layers of MOS devices observed with C-AFM. Microelectron. Reliab. 43(8): 1203-1209 (2003)

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