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"Reverse-bias stress of high electron mobility transistors: Correlation ..."

Isabella Rossetto et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.07.115

access: closed

type: Journal Article

metadata version: 2024-05-07

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Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics. Microelectron. Reliab. 53(9-11): 1456-1460 (2013)

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