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"Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors ..."

Wardhana A. Sasangka et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.06.057

access: closed

type: Journal Article

metadata version: 2022-03-23

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Wardhana A. Sasangka, Govindo J. Syaranamual, Y. Gao, Riko I. Made, Chee Lip Gan, Carl V. Thompson:
Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation. Microelectron. Reliab. 76-77: 287-291 (2017)

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