"An accurate MOSFET aging model for 28 nm integrated circuit simulation."

Bogdan Tudor et al. (2012)

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DOI: 10.1016/J.MICROREL.2011.12.008

access: closed

type: Journal Article

metadata version: 2025-05-23

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Bogdan Tudor, Joddy Wang, Zhaoping Chen, Robin Tan, Weidong Liu, Frank Lee:
An accurate MOSFET aging model for 28 nm integrated circuit simulation. Microelectron. Reliab. 52(8): 1565-1570 (2012)

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