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"The Role of the Parasitic BJT Parameters on the Reliability of New ..."

Francesco Velardi et al. (2004)

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DOI: 10.1016/J.MICROREL.2004.07.028

access: closed

type: Journal Article

metadata version: 2020-02-22

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Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectron. Reliab. 44(9-11): 1407-1411 (2004)

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