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"A novel SIMS based approach to the characterization of the channel doping ..."

R. Zelsacher et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.07.001

access: closed

type: Journal Article

metadata version: 2020-02-22

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R. Zelsacher, A. C. G. Wood, E. Bacher, E. Prax, K. Sorschag, J. Krumrey, J. Baumgartl:
A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET. Microelectron. Reliab. 47(9-11): 1585-1589 (2007)

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