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"Hole tunneling from valence band and hot-carrier induced hysteresis effect ..."
Jianhua Zhou et al. (2011)
- Jianhua Zhou, Albert Pang, Steam Cao, Shichang Zou:
Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 μm partially depleted silicon-on-insulator n-MOSFETs. Microelectron. Reliab. 51(12): 2077-2080 (2011)
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