"Hole tunneling from valence band and hot-carrier induced hysteresis effect ..."

Jianhua Zhou et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.04.004

access: closed

type: Journal Article

metadata version: 2020-02-22

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Jianhua Zhou, Albert Pang, Steam Cao, Shichang Zou:
Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 μm partially depleted silicon-on-insulator n-MOSFETs. Microelectron. Reliab. 51(12): 2077-2080 (2011)

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