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"Universal MOSFET hole mobility degradation models for circuit simulation."
Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr. (1993)
- Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.:
Universal MOSFET hole mobility degradation models for circuit simulation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(3): 439-445 (1993)
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