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"Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's."

Franco Venturi et al. (1991)

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DOI: 10.1109/43.88923

access: closed

type: Journal Article

metadata version: 2020-09-24

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  - journals/tcad/VenturiSBQJR91
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  - https://dblp.org/rec/journals/tcad/VenturiSBQJR91
Franco Venturi, Enrico Sangiorgi, Rossella Brunetti, Wolfgang Quade, Carlo Jacoboni, Bruno Riccò:
Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10(10): 1276-1286 (1991)

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