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"Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm ..."

Sungkyung Park, Wonchan Kim (2001)

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DOI: 10.1109/30.920413

access: closed

type: Journal Article

metadata version: 2022-03-15

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Sungkyung Park, Wonchan Kim:
Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology. IEEE Trans. Consumer Electron. 47(1): 10-15 (2001)

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