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ORCIDMicroelectronics Reliability, Volume 63
Volume 63, August 2016
- Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello:
Drain current model for short-channel triple gate junctionless nanowire transistors. 1-10 - Kuo-Hsuan Meng, Zaichen Chen, Elyse Rosenbaum:
Compact distributed multi-finger MOSFET model for circuit-level ESD simulation. 11-21 - Li-Lung Lai, Xiaojing Wu:
Applications of the pulsed current-voltage (I-V) and capacitance-voltage (C-V) techniques for high-resistive gates in MOSFETs. 22-30 - Yow-Jon Lin, Yu-Ju Chu:
Temperature-dependent resistive switching characteristics for Au/n-type CuAlOx/heavily doped p-type Si devices. 31-36 - Ran Jiang
, Zuyin Han, Xianghao Du:
Reliability/Uniformity improvement induced by an ultrathin TiO2 insertion in Ti/HfO2/Pt resistive switching memories. 37-41 - M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes. 42-45 - Xiang Zheng, Shiwei Feng, Yamin Zhang, Junwei Yang:
Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy. 46-51 - J. Chen, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current. 52-55 - V. S. Pershenkov, Alexander S. Bakerenkov, V. A. Felitsyn, A. S. Rodin, V. A. Telets, V. V. Belyakov:
ELDRS in SiGe transistors for room and low-temperature irradiation. 56-59 - Faiz Rahman, Jason T. Wright:
Pump chip and phosphor reliability of broadband light-emitting diodes. 60-67 - Tzu-Hao Wang, Hsuan Lee, Chih-Ming Chen, Ming-Guan Chen, Chi-Chang Hu, Yu-Jie Chen, Ray-Hua Horng:
Microstructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding material. 68-75 - Sung-Uk Zhang:
Chip package interaction for LED packages. 76-81 - Mohammad Tariq Jan, Farooq Ahmad, Nor Hisham Hamid, Mohd Haris M. Khir, Muhammad Shoaib, Khalid Ashraf:
Experimental investigation of temperature and relative humidity effects on resonance frequency and quality factor of CMOS-MEMS paddle resonator. 82-89 - Giacomo Garegnani, Vincent Fiori, Gilles Gouget, Frederic Monsieur, Clément Tavernier:
Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs. 90-96 - Muhammad Nawaz:
Evaluation of SiC MOSFET power modules under unclamped inductive switching test environment. 97-103 - David Berry, Adrian Townsend, Weikun He, Hanguang Zheng, Khai D. T. Ngo, Guo-Quan Lu:
Thermal characterization of planar high temperature power module packages with sintered nanosilver interconnection. 104-110 - Meng-Kao Yeh, Chun-Lin Lu:
Reliability analysis of 3D heterogeneous microsystem module by simplified finite element model. 111-119 - Dae Up Kim, Kwang-Seok Kim, Seung-Boo Jung:
Effects of oxidation on reliability of screen-printed silver circuits for radio frequency applications. 120-124 - Seyed Amir Paknejad, Ali Mansourian, Julian Greenberg, Khalid Khtatba, Linde Van Parijs, Samjid H. Mannan:
Microstructural evolution of sintered silver at elevated temperatures. 125-133 - Kenny Mahan, Byung Kim, Bulong Wu, Bongtae Han, Ilho Kim, Hojeong Moon, Young Nam Hwang:
Modified single cantilever adhesion test for EMC/PSR interface in thin semiconductor packages. 134-141 - Wei Feng, Tung Thanh Bui, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi:
Fabrication and stress analysis of annular-trench-isolated TSV. 142-147 - Xiang Liu, Hehe Hu, Ce Ning, Guangliang Shang, Wei Yang, Ke Wang, Xinhong Lu, Woobong Lee, Gang Wang, Jianshe Xue, Jung mok Jun, Shengdong Zhang:
Investigation into sand mura effects of a-IGZO TFT LCDs. 148-151 - Masanori Usui, Hidehiko Kimura, Toshikazu Satoh, Takashi Asada, Satoshi Yamaguchi, Masashi Kato:
Degradation of a sintered Cu nanoparticle layer studied by synchrotron radiation computed laminography. 152-158 - Mohsen H. Al-Rashed, Grzegorz Dzido, Mateusz Korpys, Jacek Smolka, Janusz Wójcik:
Investigation on the CPU nanofluid cooling. 159-165 - Angel Ochoa Brezmes, Cornelia Breitkopf:
Mechanical analysis of wafer testing with FEM simulations. 166-182 - Si Chen, Fei Qin, Tong An, Pei Chen, Bin Xie, Xunqing Shi:
Protrusion of electroplated copper filled in through silicon vias during annealing process. 183-193 - Se-Hoon Park, Jong Chul Park, Jae-Yong Park, Young-Ho Kim:
Drop-shock reliability improvement of embedded chip resistor packages through via structure modification. 194-200 - Michael J. Mutch, Thomas Pomorski, Brad C. Bittel, Corey J. Cochrane, Patrick M. Lenahan, Xin Liu, Robert J. Nemanich, Justin Brockman, Marc French, Markus Kuhn, Benjamin French, Sean W. King:
Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability. 201-213 - Adeline B. Y. Lim, Chris B. Boothroyd, Oranna Yauw, Bob Chylak, Chee Lip Gan, Zhong Chen:
Interfacial evolution and bond reliability in thermosonic Pd coated Cu wire bonding on aluminum metallization: Effect of palladium distribution. 214-223 - Bakhtiar Ali, Mohd Faizul Mohd Sabri, Iswadi Jauhari, Nazatul Liana Sukiman:
Impact toughness, hardness and shear strength of Fe and Bi added Sn-1Ag-0.5Cu lead-free solders. 224-230 - Manodipan Sahoo, Hafizur Rahaman:
Modeling and analysis of crosstalk induced overshoot/undershoot effects in multilayer graphene nanoribbon interconnects and its impact on gate oxide reliability. 231-238 - Aibin Yan, Huaguo Liang, Zhengfeng Huang, Cuiyun Jiang, Yiming Ouyang, Xuejun Li:
An SEU resilient, SET filterable and cost effective latch in presence of PVT variations. 239-250 - Carlos Sánchez-Azqueta, Javier Aguirre, Cecilia Gimeno, Concepción Aldea, Santiago Celma:
High-resolution wide-band LC-VCO for reliable operation in phase-locked loops. 251-255 - Hossein Moradian, Jeong-A Lee, Adnan Hashmi:
Self-repairing radix-2 signed-digit adder with multiple error detection, correction, and fault localization. 256-266 - Bahareh J. Farahani, Saeed Safari, Nader Sehatbakhsh:
PVTA-aware approximate custom instruction extension technique: A cross-layer approach. 267-277 - Shanshan Liu, Liyi Xiao, Zhigang Mao:
Extend orthogonal Latin square codes for 32-bit data protection in memory applications. 278-283 - Yongwoo Kwon, Byoungnam Park, Heesun Yang, Jin-Ha Hwang, Dae-Hwan Kang, Hongsik Jeong, Yunheub Song:
Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells. 284-290 - Atin Mukherjee, Anindya Sundar Dhar:
Choice of granularity for reliable circuit design using dynamic reconfiguration. 291-303 - Zahra Shirmohammadi, Seyed Ghassem Miremadi:
On designing an efficient numerical-based forbidden pattern free crosstalk avoidance codec for reliable data transfer of NoCs. 304-313 - Pedro Reviriego, Mustafa Demirci, Jesús Tabero, Alberto Regadío, Juan Antonio Maestro:
DMR +: An efficient alternative to TMR to protect registers in Xilinx FPGAs. 314-318 - Chong Leong Gan, Uda Hashim:
3D Stacked Chips: from Emerging Processes to Heterogeneous Systems. Springer (2016), ISBN: 978-3-319-20481-9. 319-320 - Michael G. Pecht, Tadahiro Shibutani, Myeongsu Kang, Melinda Hodkiewicz, Edward Cripps:
A fusion prognostics-based qualification test methodology for microelectronic products. 320-324 - Antonio Cerdeira, Magali Estrada, Lluís F. Marsal, Josep Pallarès, Benjamín Iñíguez:
On the series resistance in staggered amorphous thin film transistors. 325-335 - Martin Schneider-Ramelow, Christian Ehrhardt:
The reliability of wire bonding using Ag and Al. 336-341 - Mika Maaspuro:
Piezoelectric oscillating cantilever fan for thermal management of electronics and LEDs - A review. 342-353
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