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Susanna Reggiani
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2020 – today
- 2023
- [j10]Luigi Balestra
, Franco Ercolano
, Elena Gnani
, Susanna Reggiani
:
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE. IEEE Access 11: 6293-6298 (2023) - [c23]Laura Zunarelli, Luigi Balestra
, Susanna Reggiani, Raj Sankaralingam, Mariano Dissegna, Gianluca Boselli:
TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection. IRPS 2023: 1-6 - 2022
- [c22]Laura Zunarelli, Susanna Reggiani, Elena Gnani, Raj Sankaralingam, Mariano Dissegna, Gianluca Boselli
:
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells. IRPS 2022: 6 - 2020
- [c21]Andrea Natale Tallarico
, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c20]Davide Cornigli, Andrea Natale Tallarico
, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino
, Felice Crupi:
Characterization and Modeling of BTI in SiC MOSFETs. ESSDERC 2019: 82-85 - [c19]Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico
, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini:
TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC 2019: 86-89 - [c18]Stefania Carapezzi
, Susanna Reggiani, Elena Gnani, Antonio Gnudi:
On the electron mobility of strained InGaAs channel MOSFETs. ESSDERC 2019: 266-269 - 2018
- [j9]Davide Cornigli
, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani
, D. Varghese, Enis Tuncer
, S. Krishnan, Luu Nguyen
:
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. Microelectron. Reliab. 88-90: 752-755 (2018) - [j8]Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico
, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. 88-90: 1090-1093 (2018) - [j7]Susanna Reggiani, Luigi Balestra
, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi:
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. 88-90: 1094-1097 (2018) - [c17]Stefania Carapezzi
, Sebastian Eberle, Susanna Reggiani, Elena Gnani, Cosmin Roman
, Christofer Hierold, Antonio Gnudi:
3D TCAD modeling of NO2CNT FET sensors. ESSDERC 2018: 222-225 - 2017
- [j6]Andrea Natale Tallarico
, Susanna Reggiani
, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna:
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectron. Reliab. 76-77: 475-479 (2017) - 2016
- [c16]Michele Visciarelli
, Antonio Gnudi
, Elena Gnani, Susanna Reggiani
:
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. ESSDERC 2016: 180-183 - [c15]Martin Rau, Troels Markussen
, Enrico Caruso
, David Esseni
, Elena Gnani, Antonio Gnudi
, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani
, Andreas Schenk, Luca Selmi, Kurt Stokbro:
Performance study of strained III-V materials for ultra-thin body transistor applications. ESSDERC 2016: 184-187 - [c14]Stefania Carapezzi
, Enrico Caruso
, Antonio Gnudi
, Susanna Reggiani
, Elena Gnani:
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. ESSDERC 2016: 416-419 - 2015
- [c13]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi
, Susanna Reggiani
:
Theoretical analyses and modeling for nanoelectronics. ESSCIRC 2015: 4-9 - [c12]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi
, Susanna Reggiani
:
Theoretical analyses and modeling for nanoelectronics. ESSDERC 2015: 4-9 - 2014
- [c11]F. Villani, Elena Gnani
, Antonio Gnudi
, Susanna Reggiani
, Giorgio Baccarani
:
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. ESSDERC 2014: 262-265 - [c10]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi
, Elena Gnani
, Susanna Reggiani
, Giorgio Baccarani
:
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. ESSDERC 2014: 313-316 - [c9]I. Imperiale, Susanna Reggiani
, Elena Gnani
, Antonio Gnudi
, Giorgio Baccarani
, Luu Nguyen, Marie Denison:
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. ESSDERC 2014: 325-328 - [c8]F. Monti, Susanna Reggiani
, Gaetano Barone, Elena Gnani
, Antonio Gnudi
, Giorgio Baccarani
, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, D. Varghese, Rick Wise:
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC 2014: 333-336 - 2013
- [j5]Elena Gnani
, Antonio Gnudi
, Susanna Reggiani
, Giorgio Baccarani
:
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectron. J. 44(1): 20-25 (2013) - [c7]Emanuele Baravelli, Elena Gnani
, Roberto Grassi, Antonio Gnudi
, Susanna Reggiani
, Giorgio Baccarani
:
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. ESSDERC 2013: 69-72 - [c6]Giovanni Betti Beneventi
, Elena Gnani
, Antonio Gnudi
, Susanna Reggiani
, Giorgio Baccarani
:
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC 2013: 73-76 - [c5]Pasquale Maiorano, Elena Gnani
, Antonio Gnudi
, Susanna Reggiani, Giorgio Baccarani
:
Gate stack optimization to minimize power consumption in super-lattice fets. ESSDERC 2013: 81-84 - [c4]Susanna Reggiani
, Elena Gnani
, Antonio Gnudi
, Giorgio Baccarani
, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison:
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). ESSDERC 2013: 91-94 - [c3]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi
, Elena Gnani
, Susanna Reggiani
, Giorgio Baccarani
:
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. ESSDERC 2013: 314-317 - 2012
- [c2]Elena Gnani
, Susanna Reggiani
, Antonio Gnudi
, Giorgio Baccarani
:
Drain-conductance optimization in nanowire TFETs. ESSDERC 2012: 105-108 - [c1]Susanna Reggiani
, Gaetano Barone, Elena Gnani
, Antonio Gnudi
, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Rick Wise:
TCAD degradation modeling for LDMOS transistors. ESSDERC 2012: 185-188
2000 – 2009
- 2001
- [j4]Alberto Bertoni, Paolo Bordone, Rossella Brunetti, Carlo Jacoboni, Susanna Reggiani:
Numerical Simulation of Quantum Logic Gates Based on Quantum Wires. VLSI Design 13(1-4): 97-102 (2001) - [j3]Elena Gnani, Susanna Reggiani, Renato Colle, Massimo Rudan:
Calculation of Transport Parameters of SiO2 Polymorphs. VLSI Design 13(1-4): 311-315 (2001) - 2000
- [j2]Susanna Reggiani
, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, Giorgio Baccarani:
An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices. VLSI Design 10(4): 467-483 (2000)
1990 – 1999
- 1998
- [j1]Susanna Reggiani, Maria Cristina Vecchi, Massimo Rudan:
Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE. VLSI Design 8(1-4): 361-365 (1998)
Coauthor Index
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