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Jimmie J. Wortman

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Journal Articles

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2001
[j2]
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  - journals/mr/YangW01
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Nian Yang, Jimmie J. Wortman:
A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs. Microelectron. Reliab. 41(1): 37-46 (2001)
1993
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Nino A. Masnari, John R. Hauser, Gerald Lucovsky, Dennis M. Maher, Robert J. Markunas, Mehmet C. Bztork, Jimmie J. Wortman:
Cener for advanced electronic materials processing. Proc. IEEE 81(1): 42-59 (1993)

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