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ORCIDYuichiro Mitani
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2020 – today
- 2020
[c5]Harumi Seki, Yasushi Nakasaki, Yuichiro Mitani:
Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation. IRPS 2020: 1-7
2010 – 2019
- 2018
- [c4]Yuichiro Mitani, Yusuke Higashi
, Yasushi Nakasaki:
Study on mechanism of thermal curing in ultra-thin gate dielectrics. IRPS 2018: 3 - 2017
- [j3]Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe:
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. Microelectron. Reliab. 70: 12-21 (2017) - [j2]Takao Marukame, Kodai Ueyoshi, Tetsuya Asai, Masato Motomura, Alexandre Schmid, Masamichi Suzuki, Yusuke Higashi, Yuichiro Mitani:
Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation. IEEE Trans. Circuits Syst. II Express Briefs 64-II(4): 462-466 (2017) - [i1]Tetsufumi Tanamoto, Satoshi Takaya, Nobuaki Sakamoto, Hirotsugu Kasho, Shinichi Yasuda, Takao Marukame, Shinobu Fujita, Yuichiro Mitani:
Physically unclonable function using initial waveform of ring oscillators on 65 nm CMOS technology. CoRR abs/1703.00073 (2017) - 2015
- [c3]Yuichiro Mitani, Kazuya Matsuzawa:
Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing. ICICDT 2015: 1-4 - 2013
- [j1]Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe:
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. Microelectron. Reliab. 53(12): 1868-1874 (2013) - [c2]Masamichi Suzuki, Atsuhiro Kinoshita, Yuichiro Mitani:
Improvement of gate disturb degradation in SONOS FETs for Vth mismatch compensation in CMOS analog circuits. ICICDT 2013: 195-198 - 2012
- [c1]Yuichiro Mitani, Shigeto Fukatsu, Daisuke Hagishima, Kazuya Matsuzawa:
Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component. ICICDT 2012: 1-4
Coauthor Index
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