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ORCIDGitae Jeong
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2020 – today
- 2023
[c9]Jaehun Jeong, Sanghyeon Lee, Sada-Aki Masuoka, Shincheol Min, Sanghoon Lee, Seungkwon Kim, Taehun Myung, Byungha Choi, Chang-Woo Sohn, Sung Won Kim, Jeongmin Choi, Jungmin Park, Hyungjong Lee, Taeyoung Kim, Seokhoon Kim, Yuri Yasuda-Masuoka, Ja-Hum Ku, Gitae Jeong:
World's First GAA 3nm Foundry platform Technology (SF3) with Novel Multi-Bridge-Channel-FET (MBCFET™) Process. VLSI Technology and Circuits 2023: 1-2- [c8]Kihwang Son, Seulki Park, Kyunghoon Jung, Jun-Gyu Kim
, Younggun Ko, Keonyong Cheon, Changkeun Yoon, Jiho Kim, Jaehun Jeong, Taehun Myung, Changmin Hong, Weonwi Jang, Min-Chul Sun, Sungil Jo, Ju-Youn Kim, Byungmoo Song, Yuri Yasuda-Masuoka, Ja-Hum Ku, Gitae Jeong:
Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells. VLSI Technology and Circuits 2023: 1-2 - 2021
- [c7]Shinhee Han, Junghyuk Lee, Kiseok Suh, Kyungtae Nam, Daeeun Jeong, Sechung Oh, Sohee Hwang, Yongsung Ji, Kilho Lee, Kangho Lee, Yoonjong Song, Yeongki Hong, Gitae Jeong:
Reliability of STT-MRAM for various embedded applications. IRPS 2021: 1-5
2010 – 2019
- 2019
- [c6]Y. Ji, H. J. Goo, J. Lim, S. B. Lee, S. Lee, Taiki Uemura, J. C. Park, S. I. Han, S. C. Shin, J. H. Lee, Y. J. Song, K. M. Lee, H. M. Shin, S. H. Hwang, B. Y. Seo, Y. K. Lee, J. C. Kim, Gwanhyeob Koh, K. C. Park, Sangwoo Pae, Gi-Tae Jeong, J. S. Yoon, E. S. Jung:
Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology. IRPS 2019: 1-3 - 2013
- [j7]Yoon-Jong Song, Gitae Jeong, In-Gyu Baek, Jungdal Choi:
What Lies Ahead for Resistance-Based Memory Technologies? Computer 46(8): 30-36 (2013) - 2012
- [c5]Hokyun An, Kong-Soo Lee, Yoongoo Kang, Seonghoon Jeong, Wonseok Yoo, Jae-Jong Han, Bonghyun Kim, Hanjin Lim, Seokwoo Nam, Gi-Tae Jeong, Ho-Kyu Kang, Chilhee Chung, Byoungdeog Choi:
Current-voltage characteristics of vertical diodes for next generation memories. ESSDERC 2012: 149-152 - [c4]Youngdon Choi, Ickhyun Song, Mu-Hui Park, Hoeju Chung, Sanghoan Chang, Beakhyoung Cho, Jinyoung Kim, Younghoon Oh, Dukmin Kwon, Jung Sunwoo, Junho Shin, Yoohwan Rho, Changsoo Lee, Min Gu Kang, Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaewhan Kim, Yong-jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Hideki Horii, Jaewook Lee, KiSeung Kim, Han-Sung Joo, KwangJin Lee, Yeong-Taek Lee, Jei-Hwan Yoo, Gitae Jeong:
A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth. ISSCC 2012: 46-48 - 2011
- [c3]Byeungchul Kim, Yoon-Jong Song, Sujin Ahn, Younseon Kang, Hoon Jeong, Dongho Ahn, Seokwoo Nam, Gitae Jeong, Chilhee Chung:
Current status and future prospect of Phase Change Memory. ASICON 2011: 279-282
2000 – 2009
- 2008
- [j6]KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Yong-Jin Yoon, Kwang-Suk Yu, Gi-Tae Jeong, Hong-Sik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim:
A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput. IEEE J. Solid State Circuits 43(1): 150-162 (2008) - 2007
- [j5]Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho, KwangJin Lee, Changsoo Lee, Hyung-Rok Oh, Byung-Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu-Hwan Ro, Suyeon Kim, Choong-Duk Ha, Ki-Sung Kim, Young-Ran Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hong-Sik Jeong, Kinam Kim, YunSueng Shin:
A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. IEEE J. Solid State Circuits 42(1): 210-218 (2007) - [c2]KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Kwang-Suk Yu, Gitae Jeong, Hongsik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim:
A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput. ISSCC 2007: 472-616 - 2006
- [j4]Hyung-Rok Oh, Beak-Hyung Cho, Woo Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hye-Jin Kim, Ki-Sung Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hong-Sik Jeong, Kinam Kim:
Enhanced write performance of a 64-mb phase-change random access memory. IEEE J. Solid State Circuits 41(1): 122-126 (2006) - 2005
- [j3]Woo Yeong Cho, Beak-Hyung Cho, Byung-Gil Choi, Hyung-Rok Oh, Sangbeom Kang, Ki-Sung Kim, Kyung-Hee Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Youngnam Hwang, SuJin Ahn, Gwan-Hyeob Koh, Gitae Jeong, Hongsik Jeong, Kinam Kim:
A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM). IEEE J. Solid State Circuits 40(1): 293-300 (2005) - [c1]Kinam Kim, Gitae Jeong, Hongsik Jeong, Sungyung Lee:
Emerging memory technologies. CICC 2005: 423-426 - 2003
- [j2]Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim:
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. IEEE J. Solid State Circuits 38(11): 1906-1910 (2003) - 2002
- [j1]Kinam Kim, Gitae Jeong, Chan-Woong Chun, Sam-Jin Hwang:
DRAM reliability. Microelectron. Reliab. 42(4-5): 543-553 (2002)
Coauthor Index
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