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Roman Golman
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2020 – today
- 2024
- [c7]Roman Golman, Avinoam Segev, Adam Teman:
A 4T GC-eDRAM Bitcell with Differential Readout Mechanism For High Performance Applications. PRIME 2024: 1-4 - 2023
- [j5]Esteban Garzón, Roman Golman, Marco Lanuzza, Adam Teman, Leonid Yavits:
A Low-Complexity Sensing Scheme for Approximate Matching Content-Addressable Memory. IEEE Trans. Circuits Syst. II Express Briefs 70(10): 3867-3871 (2023) - 2022
- [j4]Esteban Garzón, Roman Golman, Zuher Jahshan, Robert Hanhan, Natan Vinshtok-Melnik, Marco Lanuzza, Adam Teman, Leonid Yavits:
Hamming Distance Tolerant Content-Addressable Memory (HD-CAM) for DNA Classification. IEEE Access 10: 28080-28093 (2022) - [c6]Esteban Garzón, Roman Golman, Odem Harel, Tzachi Noy, Yehuda Kra, Asaf Pollock, Slava Yuzhaninov, Yonatan Shoshan, Yehuda Rudin, Yoav Weizman, Marco Lanuzza, Adam Teman:
A RISC-V-based Research Platform for Rapid Design Cycle. ISCAS 2022: 2614-2615 - 2021
- [j3]Roman Golman, Netanel Nachum, Tomer Cohen, Robert Giterman, Adam Teman:
Refresh Algorithm for Ensuring 100% Memory Availability in Gain-Cell Embedded DRAM Macros. IEEE Access 9: 105831-105840 (2021) - [c5]Einat Levy, Aharon Sfez, Roman Golman, Odem Harel, Adam Teman:
4T Gain-Cell Providing Unlimited Availability through Hidden Refresh with 1W1R Functionality. ISCAS 2021: 1-4 - [i1]Esteban Garzón, Roman Golman, Zuher Jahshan, Robert Hanhan, Natan Vinshtok-Melnik, Marco Lanuzza, Adam Teman, Leonid Yavits:
Hamming Distance Tolerant Content-Addressable Memory (HD-CAM) for Approximate Matching Applications. CoRR abs/2111.09747 (2021) - 2020
- [j2]Andrea Bonetti, Roman Golman, Robert Giterman, Adam Teman, Andreas Burg:
Gain-Cell Embedded DRAMs: Modeling and Design Space. IEEE Trans. Very Large Scale Integr. Syst. 28(3): 646-659 (2020) - [c4]Andrea Bonetti, Roman Golman, Robert Giterman, Adam Teman, Andreas Burg:
Gain-Cell Embedded DRAMs: Modeling and Design Space. ISCAS 2020: 1 - [c3]Roman Golman, Robert Giterman, Odem Harel, Adam Teman:
Improved Read Access in GC-eDRAM Memory by Dual-Negative Word-Line Technique. ISCAS 2020: 1-5
2010 – 2019
- 2019
- [j1]Robert Giterman, Roman Golman, Adam Teman:
Improving Energy-Efficiency in Dynamic Memories Through Retention Failure Detection. IEEE Access 7: 27641-27649 (2019) - 2018
- [c2]Roman Golman, Robert Giterman, Adam Teman:
Configurable Multi-Port Dynamic Bitcell with Internal Refresh Mechanism. ICECS 2018: 589-592 - [c1]Robert Giterman, Roman Golman, Amir Shalom, Or Maltabashi, Alexander Fish, Adam Teman:
Live Demonstration: An 800 Mhz Gain-Cell Embedded DRAM in 28 nm CMOS Bulk Process for Approximate Computing Applications. ISCAS 2018: 1-
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