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2020 – today
- 2024
[c8]Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang, Wei-Keng Chang, Chang-Feng Yang, Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang, Chih-Yang Chang, Wen-Ting Chu, Harry Chuang, Yih Wang
, Yu-Der Chih, Tsung-Yung Jonathan Chang:
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C. ISSCC 2024: 288-290- [c7]Ku-Feng Lin, Hiroki Noguchi, Yi-Chun Shih, Perng-Fei Yuh, Yuan-Jen Lee, Tung-Cheng Chang, Sheng-Po Huang, Yu-Fan Lin, Chun-Ying Lee, Yen-Hsiang Huang, Jui-Che Tsai, Saman Adham, Peter Noel, Ramin Yazdi, Marat Gershoig, YangJae Shin, Vineet Joshi, Ted Wong, Meng-Ru Jiang, J. J. Wu, Chun-Tai Cheng, Yu-Jen Wang, Harry Chuang, Yu-Der Chih, Yih Wang, Tsung-Yung Jonathan Chang:
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes. ISSCC 2024: 292-294 - [c6]H. J. Li, K. P. Chang, C. E. Chen, W. T. Hsieh, H. H. Kuo, C. C. Huang, H. C. Chen, Z. H. Ya, H. Y. Chen, J. D. Jin, S. H. Yang, Y. W. Ting, K. C. Tseng, K. C. Huang, Harry Chuang:
A Novel Phase Change Material RF Switch with 16nm Technology to Achieve Low Voltage and Low Ron*Coff for mmWave. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c5]Po-Hao Lee, Chia-Fu Lee, Yi-Chun Shih, Hon-Jarn Lin, Yen-An Chang, Cheng-Han Lu, Yu-Lin Chen, Chieh-Pu Lo, Chung-Chieh Chen, Cheng-Hsiung Kuo, Tan-Li Chou, Chia-Yu Wang, J. J. Wu, Roger Wang, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity. ISSCC 2023: 494-495 - 2020
- [c4]Yu-Der Chih, Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Chieh-Pu Lo, Meng-Chun Shih, Kuei-Hung Shen, Harry Chuang, Tsung-Yung Jonathan Chang:
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference. ISSCC 2020: 222-224 - [c3]Chung-Cheng Chou, Zheng-Jun Lin, Chien-An Lai, Chin-I Su, Pei-Ling Tseng, Wei-Chi Chen, Wu-Chin Tsai, Wen-Ting Chu, Tong-Chern Ong, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [j1]Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time. IEEE J. Solid State Circuits 54(4): 1029-1038 (2019) - [c2]William J. Gallagher, Eric Chien, Tien-Wei Chiang, Jian-Cheng Huang, Meng-Chun Shih, C. Y. Wang, Christine Bair, George Lee, Yi-Chun Shih, Chia-Fu Lee, Roger Wang, Kuei-Hung Shen, J. J. Wu, Wayne Wang, Harry Chuang:
Recent Progress and Next Directions for Embedded MRAM Technology. VLSI Circuits 2019: 190- - 2018
- [c1]Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time. VLSI Circuits 2018: 79-80
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