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B. T. Chan
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Conference and Workshop Papers
- 2024
- [c8]Steven Demuynck, Victor Vega-Gonzalez, C. Toledo de Carvalho Cavalcante, L. Petersen Barbosa Lima, K. Stiers, C. Sheng, A. Vandooren, M. Hosseini, X. Zhou, Hans Mertens, Thomas Chiarella, Jürgen Bömmels, Roger Loo, E. Rosseel, Clement Porret, Y. Shimura, A. Akula, G. Mannaert, S. Choudhury, V. Brissonneau, E. Dupuy, T. Sarkar, Nathali Franchina-Vergel, A. Peter, Nicolas Jourdan, J. P. Soulie, Kevin Vandersmissen, F. Sebaai, P. Puttarame Gowda, K. Lai, A. Mingardi, S. Sumar Sarkar, K. D'Have, B. T. Chan, A. Sepulveda Marquez, R. Langer, I. Gyo Koo, E. Altamirano Sanchez, Katia Devriendt, P. Rincon Delgadillo, F. Lazzarino, Jérôme Mitard, J. Geypen, E. Grieten, D. Batuk, Y.-F. Chen, F. Verbeek, F. Holsteyns, S. Subramanian, N. Horiguchi, S. Biesemans:
Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c7]Hiroaki Arimura, S. Brus, Jacopo Franco, Yusuke Oniki, A. Vandooren, T. Conard, B. T. Chan, B. Kannan, M. Samiee, W. Li, P. Deminskyi, E. Shero, J. Bakke, Nicolas Jourdan, G. Alessio Verni, J. W. Maes, M. Givens, Lars-Åke Ragnarsson, Jérôme Mitard, E. Dentoni Litta, N. Horiguchi:
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET. VLSI Technology and Circuits 2023: 1-2 - [c6]Hans Mertens, M. Hosseini, Thomas Chiarella, D. Zhou, S. Wang, G. Mannaert, E. Dupuy, D. Radisic, Z. Tao, Yusuke Oniki, Andriy Hikavyy, R. Rosseel, A. Mingardi, S. Choudhury, P. Puttarame Gowda, F. Sebaai, A. Peter, Kevin Vandersmissen, J. P. Soulie, An De Keersgieter, L. Petersen Barbosa Lima, C. Cavalcante, D. Batuk, G. T. Martinez, J. Geypen, F. Seidel, K. Paulussen, P. Favia, Jürgen Bömmels, Roger Loo, P. Wong, A. Sepulveda Marquez, B. T. Chan, Jérôme Mitard, S. Subramanian, S. Demuynck, E. Dentoni Litta, N. Horiguchi, S. Samavedam, S. Biesemans:
Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning. VLSI Technology and Circuits 2023: 1-2 - [c5]S. Yang, Pieter Schuddinck, Marie Garcia Bardon, Yang Xiang, Anabela Veloso, B. T. Chan, Gioele Mirabelli, Gaspard Hiblot, Geert Hellings, Julien Ryckaert:
PPA and Scaling Potential of Backside Power Options in N2 and A14 Nanosheet Technology. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c4]Anabela Veloso, Anne Jourdain, D. Radisic, Rongmei Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Yusuke Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi:
Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails. VLSI Technology and Circuits 2022: 284-285 - [c3]Romain Ritzenthaler, Elena Capogreco, E. Dupuy, Hiroaki Arimura, J. P. Bastos, P. Favia, F. Sebaai, D. Radisic, V. T. H. Nguyen, G. Mannaert, B. T. Chan, V. Machkaoutsan, Y. Yoon, H. Itokawa, M. Yamaguchi, Y. Chen, Pierre Fazan, S. Subramanian, Alessio Spessot, E. Dentoni Litta, S. Samavedam, Naoto Horiguchi:
High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories. VLSI Technology and Circuits 2022: 306-307 - 2021
- [c2]Iuliana P. Radu, Roy Li, Anton Potocnik, Tsvetan Ivanov, Danny Wan, Stefan Kubicek, Nard I. Dumoulin Stuyck, Jeroen Verjauw, Julien Jussot, Yann Canvel, Clement Godfrin, Massimo Mongillo, Rohith Acharya, Asser Elsayed, Mohamed Shehata, Xiaoyu Piao, Antoine Pacco, Laurent Souriau, Sebastien Couet, B. T. Chan, Jan Craninckx, Bertrand Parvais, Alexander Grill, Subramanian Narasimhamoorthy, Steven Van Winckel, Steven Brebels, Fahd A. Mohiyaddin, George Simion, Bogdan Govoreanu:
Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing. VLSI Circuits 2021: 1-2 - [c1]Nard I. Dumoulin Stuyck, Roy Li, Clement Godfrin, Asser Elsayed, Stefan Kubicek, Julien Jussot, B. T. Chan, Fahd A. Mohiyaddin, Mohamed Shehata, George Simion, Yann Canvel, Ludovic Goux, Heyns Heyns, Bogdan Govoreanu, Iuliana P. Radu:
Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process. VLSI Circuits 2021: 1-2
Coauthor Index
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