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Florent Miller
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2020 – today
- 2022
- [c5]Luc Noizette, Florent Miller, Thierry Colladant, Youri Helen, Régis Leveugle:
Using Application Profiling based on a Virtual Platform for SoC Fault Tolerance Assessment. PRIME 2022: 225-228
2010 – 2019
- 2017
- [j4]Thomas Santini, Sébastien Morand, Mitra Fouladirad, Florent Miller, Antoine Grall
, Bruno Allard:
Non-homogenous gamma process: Application to SiC MOSFET threshold voltage instability. Microelectron. Reliab. 75: 14-19 (2017) - 2015
- [j3]Cécile Weulersse, Florent Miller, Thierry Carrière, R. Mangeret:
Prediction of proton cross sections for SEU in SRAMs and SDRAMs using the METIS engineer tool. Microelectron. Reliab. 55(9-10): 1491-1495 (2015) - 2014
- [j2]Thomas Santini, Sébastien Morand, Mitra Fouladirad, Luong-Viêt Phung
, Florent Miller, Bruno Foucher, Antoine Grall
, Bruno Allard:
Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment. Microelectron. Reliab. 54(9-10): 1718-1723 (2014) - 2012
- [j1]Cécile Weulersse, Florent Miller, Dan Alexandrescu, Erwin Schaefer, Olivier Crépel, Rémi Gaillard:
Test methodology of a new upset mechanism induced by protons in deep sub-micron devices. Microelectron. Reliab. 52(9-10): 2482-2486 (2012)
2000 – 2009
- 2009
- [c4]Antonin Bougerol, Florent Miller, Nadine Buard:
Novel DRAM mitigation technique. IOLTS 2009: 109-113 - 2008
- [c3]Antonin Bougerol, Florent Miller, Nadine Buard:
SDRAM Architecture & Single Event Effects Revealed with Laser. IOLTS 2008: 283-288 - 2007
- [c2]Nadine Buard, Florent Miller, Cédric Ruby, Rémi Gaillard:
Latchup effect in CMOS IC: a solution for crypto-processors protection against fault injection attacks? IOLTS 2007: 63-70 - 2006
- [c1]Guillaume Hubert
, Antonin Bougerol, Florent Miller, Nadine Buard, Lorena Anghel
, Thierry Carrière, Frederic Wrobel
, Rémi Gaillard:
Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells. IOLTS 2006: 63-74
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last updated on 2024-04-25 05:54 CEST by the dblp team
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