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ORCIDMohamed Henini
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2020 – today
- 2022
[j19]Slimane Oussalah
, Walid Filali, Elyes Garoudja, Boumediene Zatout, Fouaz Lekoui, Rachid Amrani, Noureddine Sengouga, Mohamed Henini:
Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. Microelectron. J. 122: 105409 (2022)
2010 – 2019
- 2018
- [c1]Walid Filali, Slimane Oussalah, Noureddine Sengouga, Mohamed Henini, David Taylor:
Simulation of p-type Schottky Diode Based on Al0.29Ga0.71As with Titanium/Gold Schottky Contact. ICM 2018: 272-275
2000 – 2009
- 2009
- [j18]T. Nuytten, Manus Hayne, Mohamed Henini, V. V. Moshchalkov:
Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. Microelectron. J. 40(3): 486-488 (2009) - [j17]Jan Vanis, Jirí Zelinka, Václav Malina, Mohamed Henini, Jirí Pangrác, Karel Melichar, Eduard Hulicius, Filip Sroubek, Jarmila Walachová:
Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE. Microelectron. J. 40(3): 496-498 (2009) - [j16]Robert Kudrawiec, P. Poloczek, Jan Misiewicz, M. Shafi, J. Ibáñez, R. H. Mari, Mohamed Henini, M. Schmidbauer, S. V. Novikov, Lyudmila Turyanska, Sergio I. Molina, D. L. Sales, M. F. Chisholm:
Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates. Microelectron. J. 40(3): 537-539 (2009) - [j15]Gil de Aquino Farias, Jeanlex S. de Sousa, Eudenílson L. Albuquerque, Mohamed Henini:
International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008). Microelectron. J. 40(4-5): 711 (2009) - 2008
- [j14]Mohamed Henini, Isaac Hernández-Calderón:
Preface. Microelectron. J. 39(3-4): 301 (2008) - [j13]Angela S. Camacho Beltran, Anderson Dussan Cuenca, Mohamed Henini:
Preface. Microelectron. J. 39(11): 1219 (2008) - 2006
- [j12]Mohamed Henini:
Sixth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2006). Microelectron. J. 37(12): 1425-1426 (2006) - [j11]R. T. Harley, O. Z. Karimov, Mohamed Henini:
Spin dynamics in (110)-oriented quantum wells. Microelectron. J. 37(12): 1486-1489 (2006) - 2005
- [j10]Mohamed Henini, Isaac Hernández-Calderón:
Preface. Microelectron. J. 36(3-6): 173-174 (2005) - [j9]Yara Galvão Gobato, Maria José Santos Pompeu Brasil, Ihosvany Camps, Hugo Bonette de Carvalho, Lara F. dos Santos, Gilmar Eugênio Marques, Mohamed Henini, Laurence Eaves, G. Hill:
Charge buildup effects in asymmetric p-type resonant tunneling diodes. Microelectron. J. 36(3-6): 356-358 (2005) - [j8]Mohamed Henini, Maciej Bugajski:
Advances in self-assembled semiconductor quantum dot lasers. Microelectron. J. 36(11): 950-956 (2005) - 2004
- [j7]Victor R. Velasco, Joaquín Tutor-Sánchez, Mohamed Henini:
Preface for NANO' 2003 proceedings. Microelectron. J. 35(1): 1 (2004) - [j6]Mohamed Henini:
Semiconductors: Data Handbook: Otfried Madelung (Ed.); Springer, ISBN 3-540-40488-0. Microelectron. J. 35(8): 685 (2004) - [j5]Mohamed Henini:
Epitaxy of Nanostructures: V.A. Shchulin, N.N. Ledenstov, D. Bimberg (Eds.); Springer, ISBN 3-540-40488-0. Microelectron. J. 35(8): 685 (2004) - [j4]Mohamed Henini:
X-ray Scattering from Semiconductors (2nd Edition): Paul F. Fewster; Imperial College Press, ISBN: 1-86094-360-8. Microelectron. J. 35(8): 685-686 (2004) - 2003
- [j3]Mohamed Henini:
Introduction to the low dimensional structures and devices conference (LDSD'2002) Fortaleza, Brazil: December 8-13, 2002. Microelectron. J. 34(5-8): 321-322 (2003) - [j2]Mohamed Henini:
Self-assembled quantum dots on GaAs for optoelectronic applications. Microelectron. J. 34(5-8): 333-336 (2003) - [j1]A. Sellai, H. Al-Hadhrami, S. Al-Harthy, Mohamed Henini:
Resonant tunneling diode circuits using Pspice. Microelectron. J. 34(5-8): 741-745 (2003)
Coauthor Index
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