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Journal Articles
- 2007
[j8]Mohamed Ali Belaïd
, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon:
Reliability study of power RF LDMOS device under thermal stress. Microelectron. J. 38(2): 164-170 (2007)- [j7]M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter:
Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET. Microelectron. J. 38(6-7): 727-734 (2007) - [j6]Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon:
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. Microelectron. Reliab. 47(1): 59-64 (2007) - [j5]M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter:
Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses. Microelectron. Reliab. 47(9-11): 1406-1410 (2007) - 2006
- [j4]Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline:
Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. Microelectron. Reliab. 46(5-6): 994-1000 (2006) - [j3]Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon:
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. Microelectron. Reliab. 46(9-11): 1800-1805 (2006) - 2005
- [j2]Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon:
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. Microelectron. Reliab. 45(9-11): 1732-1737 (2005) - 2004
- [j1]Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata:
Reliability study of Power RF LDMOS for Radar Application. Microelectron. Reliab. 44(9-11): 1449-1454 (2004)
Coauthor Index
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