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"CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of ..."

Sachin Yadav et al. (2021)

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DOI: 10.1109/ICICDT51558.2021.9626530

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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  - conf/icicdt/YadavCZVPAKMELR21
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Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert:
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. ICICDT 2021: 1-4

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