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"Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT."
Aby-Gaël Viey et al. (2019)
- Aby-Gaël Viey
, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso:
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS 2019: 1-6
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