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ORCIDGérard Ghibaudo
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2020 – today
- 2023
[c40]F. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha:
Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K. IRPS 2023: 1-4- 2022
- [c39]F. Serra Di Santa Maria
, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota:
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. ESSDERC 2022: 257-260 - 2021
- [c38]Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou:
VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits. ESSDERC 2021: 247-250 - [c37]B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo:
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC 2021: 295-298 - [c36]Roméo Kom Kammeugne, Charles Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, Laura Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, Edwige Bano, Gérard Ghibaudo:
Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. ESSDERC 2021: 299-302 - [c35]Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou:
"Pinch to Detect": A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs. IRPS 2021: 1-5 - [c34]Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo:
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS 2021: 1-8
2010 – 2019
- 2019
- [c33]Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso:
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS 2019: 1-6 - 2018
- [j34]D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy:
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. 87: 106-112 (2018) - [j33]Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard:
Study of forward AC stress degradation of GaN-on-Si Schottky diodes. Microelectron. Reliab. 88-90: 641-644 (2018) - [c32]Theano A. Karatsori, K. Bennamane, Christoforos G. Theodorou, L. Czornomaz, Jean Fompeyrine, Cezar B. Zota, Clarissa Convertino, Gérard Ghibaudo:
Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator. ESSDERC 2018: 166-169 - [c31]Krishna Pradeep, Theano A. Karatsori, Thierry Poiroux, Andre Juge, Patrick Scheer, Gilles Gouget, Emmanuel Josse, Gérard Ghibaudo:
Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. ESSDERC 2018: 242-245 - [c30]Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo:
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS 2018: 6 - 2017
- [j32]Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo:
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. 79: 281-287 (2017) - [c29]Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo:
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. ESSDERC 2017: 144-147 - 2016
- [j31]Ioannis Messaris, Theano A. Karatsori, Nikolaos Fasarakis, Christoforos G. Theodorou, Spiros Nikolaidis, Gérard Ghibaudo, C. A. Dimitriadis:
Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. Microelectron. Reliab. 56: 10-16 (2016) - [c28]Gérard Ghibaudo:
Electrical characterization of FDSOI CMOS devices. ESSDERC 2016: 135-141 - [c27]R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo:
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. ESSDERC 2016: 142-145 - [c26]Christoforos G. Theodorou, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo:
Noise-induced dynamic variability in nano-scale CMOS SRAM cells. ESSDERC 2016: 256-259 - [c25]Joseph Nguyen, David Turgis, David Bonciani, Brice Lhomme, Yann Carminati, Olivier Callen, Guillaume Guirleo, Lorenzo Ciampolini, Gérard Ghibaudo:
RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs. NATW 2016: 28-33 - 2015
- [j30]Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo:
Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. 55(9-10): 1417-1421 (2015) - [c24]Gaspard Hiblot, Quentin Rafhay, Loic Gaben, Gérard Ghibaudo, Frédéric Boeuf:
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR. ESSDERC 2015: 242-245 - [c23]Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond:
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. ESSDERC 2015: 246-249 - [c22]Luca Pirro, Irina Ionica, Sorin Cristoloveanu, Gérard Ghibaudo:
Low-frequency noise in bare SOI wafers: Experiments and model. ESSDERC 2015: 286-289 - [c21]Sarra Souiki-Figuigui, Veronique Sousa, Gérard Ghibaudo, Gabriele Navarro, Martin Coué, Luca Perniola, P. Zuliani, Roberto Annunziata:
Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements. IRPS 2015: 1 - [c20]Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo:
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. IRPS 2015: 1 - [c19]A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo:
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS 2015: 5 - [c18]Daniele Garbin, Elisa Vianello, Olivier Bichler, M. Azzaz, Quentin Rafhay, Philippe Candelier, Christian Gamrat, Gérard Ghibaudo, Barbara De Salvo, Luca Perniola:
On the impact of OxRAM-based synapses variability on convolutional neural networks performance. NANOARCH 2015: 193-198 - [c17]Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo:
Impact of short-channel effects on velocity overshoot in MOSFET. NEWCAS 2015: 1-4 - 2014
- [j29]Omar Jonani Franco Piliado, Giancarlo Castaneda, Andre Juge, Gérard Ghibaudo:
Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability. J. Low Power Electron. 10(1): 127-136 (2014) - [c16]Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo:
Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI. ESSDERC 2014: 94-97 - [c15]Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, Charalabos A. Dimitriadis, Gérard Ghibaudo:
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. ESSDERC 2014: 214-217 - [c14]Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord:
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. ESSDERC 2014: 254-257 - [c13]Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo:
Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime. ESSDERC 2014: 286-289 - 2013
- [c12]Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo:
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC 2013: 198-201 - [c11]Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold:
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC 2013: 300-303 - [c10]Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, Bertrand Pelloux-Prayer, Shishir Kumar, Philippe Flatresse, Christophe Lecocq, Gérard Ghibaudo:
Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI. ISCAS 2013: 1452-1455 - 2012
- [j28]Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo:
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. IEEE J. Solid State Circuits 47(5): 1075-1083 (2012) - [c9]Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold:
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC 2012: 73-76 - [c8]Min-Kyu Joo, Un Jeong Kim, Dae-Young Jeon, So Jeong Park, Mireille Mouis, Gyu-Tae Kim, Gérard Ghibaudo:
Static and low frequency noise characterization of densely packed CNT-TFTs. ESSDERC 2012: 129-132 - [c7]Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo:
New parameter extraction method based on split C-V for FDSOI MOSFETs. ESSDERC 2012: 217-220 - [c6]Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo:
Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. ESSDERC 2012: 334-337 - [c5]Nikolaos Fasarakis, Andreas Tsormpatzoglou, Dimitrios H. Tassis, Konstantinos Papathanasiou, C. A. Dimitriadis, Gérard Ghibaudo:
Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs. ICECS 2012: 953-956 - [c4]Joris Lacord, Perrine Batude, Gérard Ghibaudo, Frédéric Boeuf:
Analytical modeling of parasitics in monolithically integrated 3D inverters. ICICDT 2012: 1-4 - 2010
- [j27]L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent:
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. Microelectron. Reliab. 50(9-11): 1259-1262 (2010)
2000 – 2009
- 2009
- [c3]Emanuela Buccafurri, Abdelkrim Medjahdi, Françis Calmon, Raphael Clerc, Marco Pala, A. Poncet, Gérard Ghibaudo:
Challenges and prospects of RF oscillators using silicon resonant tunneling diodes. ESSCIRC 2009: 220-223 - [c2]L. Gerrer, Gérard Ghibaudo, G. Ribes:
Oxide Soft Breakdown : From device modeling to small circuit simulation. ESSCIRC 2009: 368-371 - 2008
- [j26]Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo:
Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectron. Reliab. 48(8-9): 1198-1201 (2008) - [j25]Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo:
Impact of silicon nitride CESL on NLDEMOS transistor reliability. Microelectron. Reliab. 48(8-9): 1539-1543 (2008) - 2007
- [j24]Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin:
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. Microelectron. Reliab. 47(4-5): 489-496 (2007) - [j23]Charles Leroux, Gérard Ghibaudo, Gilles Reimbold:
Accurate determination of flat band voltage in advanced MOS structure. Microelectron. Reliab. 47(4-5): 660-664 (2007) - [j22]Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo:
Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. Microelectron. Reliab. 47(4-5): 743-747 (2007) - 2005
- [j21]G. Ribes, S. Bruyère, M. Denais, David Roy, Gérard Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectron. Reliab. 45(5-6): 841-844 (2005) - [j20]D. Bauza, F. Rahmoune, R. Laqli, Gérard Ghibaudo:
On the SILC mechanism in MOSFET's with ultrathin oxides. Microelectron. Reliab. 45(5-6): 849-852 (2005) - [j19]Emilie Deloffre, L. Montès, Gérard Ghibaudo, Sylvie Bruyère, Serge Blonkowski, Stéphane Bécu, Mickael Gros-Jean, Sébastien Crémer:
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. Microelectron. Reliab. 45(5-6): 925-928 (2005) - [j18]G. Ribes, S. Bruyère, M. Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45(12): 1842-1854 (2005) - 2003
- [j17]Gérard Ghibaudo, E. Vincent:
Guest Editorial. Microelectron. Reliab. 43(8): 1173 (2003) - [j16]Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43(8): 1199-1202 (2003) - [j15]M. Fadlallah, C. Petit, A. Meinertzhagen, Gérard Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader:
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. Microelectron. Reliab. 43(9-11): 1433-1438 (2003) - [j14]François Lime, Gérard Ghibaudo, B. Guillaumot:
Charge trapping in SiO2/HfO2/TiN gate stack. Microelectron. Reliab. 43(9-11): 1445-1448 (2003) - 2002
- [j13]M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter, G. Guégan:
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. Microelectron. Reliab. 42(1): 41-46 (2002) - [j12]Gérard Ghibaudo, T. Boutchacha:
Electrical noise and RTS fluctuations in advanced CMOS devices. Microelectron. Reliab. 42(4-5): 573-582 (2002) - [j11]B. Cretu, Francis Balestra, Gérard Ghibaudo, G. Guégan:
Origin of hot carrier degradation in advanced nMOSFET devices. Microelectron. Reliab. 42(9-11): 1405-1408 (2002) - [j10]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42(9-11): 1505-1508 (2002) - 2001
- [j9]Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra:
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. Microelectron. Reliab. 41(6): 855-860 (2001) - [j8]P. O'Sullivan, Raphael Clerc, Kevin G. McCarthy, Alan Mathewson, Gérard Ghibaudo:
Direct tunnelling models for circuit simulation. Microelectron. Reliab. 41(7): 951-957 (2001) - [j7]Raphael Clerc, Alessandro S. Spinelli, Gérard Ghibaudo, Charles Leroux, G. Pananakakis:
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). Microelectron. Reliab. 41(7): 1027-1030 (2001) - [j6]Sylvie Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides. Microelectron. Reliab. 41(7): 1031-1034 (2001) - [j5]Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo:
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectron. Reliab. 41(7): 1035-1039 (2001) - [j4]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41(9-10): 1295-1300 (2001) - [j3]M. Fadlallah, Arkadiusz Szewczyk, C. Giannakopoulos, B. Cretu, Frederic Monsieur, T. Devoivre, Jalal Jomaah, Gérard Ghibaudo:
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. Microelectron. Reliab. 41(9-10): 1361-1366 (2001) - [j2]S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41(9-10): 1367-1372 (2001) - [j1]François Lime, Gérard Ghibaudo, G. Guégan:
Stress induced leakage current at low field in ultra thin oxides. Microelectron. Reliab. 41(9-10): 1421-1425 (2001) - 2000
- [c1]M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter:
Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors. ICECS 2000: 940-943
Coauthor Index
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