"18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test ..."

Kyomin Sohn et al. (2016)

Details and statistics

DOI: 10.1109/ISSCC.2016.7418034

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

a service of  Schloss Dagstuhl - Leibniz Center for Informatics