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"Design of a high-performance 12T SRAM cell for single event upset tolerance."

Chunhua Qi et al. (2021)

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DOI: 10.1007/S11432-020-3123-2

access: closed

type: Journal Article

metadata version: 2023-03-27

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  - journals/chinaf/QiZMLWXHZ21
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  - https://dblp.org/rec/journals/chinaf/QiZMLWXHZ21
Chunhua Qi, Yanqing Zhang, Guoliang Ma, Chaoming Liu, Tianqi Wang, Liyi Xiao, Mingxue Huo, Guofu Zhai:
Design of a high-performance 12T SRAM cell for single event upset tolerance. Sci. China Inf. Sci. 64(11) (2021)

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