"Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors ..."

Norihide Kashio et al. (2016)

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DOI: 10.1587/TRANSELE.E99.C.522

access: closed

type: Journal Article

metadata version: 2024-10-06

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  - https://dblp.org/rec/journals/ieicet/KashioHKIM16
Norihide Kashio, Takuya Hoshi, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki:
Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz f_max and 5-V Breakdown Voltage. IEICE Trans. Electron. 99-C(5): 522-527 (2016)

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