"Experimental verification of the usefulness of the nth power law MOSFET ..."

Néstor Berbel et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.06.041

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type: Journal Article

metadata version: 2025-08-05

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Néstor Berbel, Raúl Fernández-García, Ignacio Gil, Binhong Li, Alexandre Boyer, Sonia Bendhia:
Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout. Microelectron. Reliab. 51(9-11): 1564-1567 (2011)

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