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2020 – today
- 2024
[j22]Ai He, Binhong Li, Jianzhong Li, Xing Zhao, Jincai Guo, Jianping Wang, Xiangqian Zeng, Yun Wang, Tianchun Ye, Quan Xue:
A two-stage slicer employing body biasing for 64-Gb/s PAM4 wireline receiver in 22-nm FDSOI technology. Microelectron. J. 151: 106337 (2024)- [j21]Xiangyun Zhao
, Haihang Chen, Binhong Li, Zhen Yang, Huailiang Li:
Using Fuzzy C-Means Clustering to Determine First Arrival of Microseismic Recordings. Sensors 24(5): 1682 (2024) - 2023
- [j20]Binhong Li, Jiaxi Luo, Hongjie Xu:
A Portfolio Selection Strategy Based on the Peak Price Involving Randomness. IEEE Access 11: 52066-52074 (2023) - [j19]Taochen Gu, Fayu Wan, Jingjie Zhou, Qizheng Ji, Binhong Li, Blaise Ravelo:
T-Topology Coupler-Based Bandpass Negative Group Delay Active Circuit Design and Test. IEEE Des. Test 40(2): 118-126 (2023) - [c4]Jian Chang, Binhong Li, Jiang Xiao, Licheng Lin, Hai Jin:
Anole: A Lightweight and Verifiable Learned-Based Index for Time Range Query on Blockchain Systems. DASFAA (1) 2023: 519-534 - 2022
- [j18]Fayu Wan, Taochen Gu, Binhong Li, Bo Li, Wenceslas Rahajandraibe, Mathieu Guerin, Sébastien Lalléchère, Blaise Ravelo:
Design and Experimentation of Inductorless Low-Pass NGD Integrated Circuit in 180-nm CMOS Technology. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41(11): 4965-4974 (2022) - 2021
- [j17]Jianfei Wu, Xiangqian Li, Binhong Li, Yong Xie, Mengjun Wang:
Examining the Thermal Stress Effect of Electromagnetic Susceptibility of Automotive CAN Controller. J. Circuits Syst. Comput. 30(1): 2150010:1-2150010:16 (2021) - 2020
- [j16]Xiang Zhou, Binhong Li, Ningdong Li, Blaise Ravelo, Xiaofeng Hu, Qizheng Ji, Fayu Wan, Glauco Fontgalland:
Analytical Design of Dual-Band Negative Group Delay Circuit With Multi-Coupled Lines. IEEE Access 8: 72749-72756 (2020) - [j15]Xiang Zhou, Taochen Gu, Lili Wu, Fayu Wan, Binhong Li, Nour Mohammad Murad, Sébastien Lalléchère, Blaise Ravelo:
S-Matrix and Bandpass Negative Group Delay Innovative Theory of Ti-Geometrical Shape Microstrip Structure. IEEE Access 8: 160363-160373 (2020)
2010 – 2019
- 2019
- [j14]Fayu Wan, Taocheng Gu, Blaise Ravelo, Binhong Li, Jing Cheng, Qingyun Yuan, Junxiang Ge:
Negative Group Delay Theory of a Four-Port RC-Network Feedback Operational Amplifier. IEEE Access 7: 75708-75720 (2019) - [j13]Fayu Wan, Ningdong Li, Blaise Ravelo, Junxiang Ge, Binhong Li:
Time-Domain Experimentation of NGD ActiveRC-Network Cell. IEEE Trans. Circuits Syst. II Express Briefs 66-II(4): 562-566 (2019) - 2018
- [j12]Fayu Wan, Ningdong Li, Blaise Ravelo, Qizheng Ji, Binhong Li, Junxiang Ge:
The Design Method of the Active Negative Group Delay Circuits Based on a Microwave Amplifier and an RL-Series Network. IEEE Access 6: 33849-33858 (2018) - [j11]Jianfei Wu, Wei Zhu, Binhong Li, Yafei Li, Hongyi Wang, Mengjun Wang:
Investigations on immunity of interfaces between intelligent media processor and DDR3 SDRAM memory. Microelectron. Reliab. 88-90: 230-235 (2018) - [j10]Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang:
Process variation dependence of total ionizing dose effects in bulk nFinFETs. Microelectron. Reliab. 88-90: 946-951 (2018) - [j9]Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin:
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. Microelectron. Reliab. 88-90: 969-973 (2018) - [j8]Jian Wang, Binhong Li, Yang Huang, Kai Zhao, Fang Yu, Qiwen Zheng, Qi Guo, Liewei Xu, J. Gao, X. Cai, Y. Cui:
The total ionizing dose response of leading-edge FDSOI MOSFETs. Microelectron. Reliab. 88-90: 979-983 (2018) - 2017
- [j7]Jianfei Wu, Binhong Li, W. Zhu, H. Wang, L. Zheng:
Investigations on the EFT immunity of microcontrollers with different architectures. Microelectron. Reliab. 76-77: 708-713 (2017) - 2016
- [j6]Binhong Li, Kai Zhao, Jianfei Wu, Xing Zhao, Jianwei Su, Jiantou Gao, Chuang Gao, Jun Luo:
Electromagnetic susceptibility characterization of double SOI device. Microelectron. Reliab. 64: 168-171 (2016) - [j5]Jianfei Wu, Chuangwei Li, Binhong Li, Wei Zhu, Hongyi Wang:
Microcontroller susceptibility variations to EFT burst during accelerated aging. Microelectron. Reliab. 64: 210-214 (2016) - 2012
- [j4]Alexandre Boyer, Sonia Ben Dhia, Binhong Li, Christophe Lemoine, Bertrand Vrignon:
Prediction of Long-term Immunity of a Phase-Locked Loop. J. Electron. Test. 28(6): 791-802 (2012) - 2011
- [j3]Binhong Li, Néstor Berbel, Alexandre Boyer, Sonia Bendhia, Raúl Fernández-García:
Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences. Microelectron. Reliab. 51(9-11): 1557-1560 (2011) - [j2]Néstor Berbel, Raúl Fernández-García, Ignacio Gil, Binhong Li, Alexandre Boyer, Sonia Bendhia:
Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout. Microelectron. Reliab. 51(9-11): 1564-1567 (2011) - [c3]Alexandre Boyer, Sonia Ben Dhia, Binhong Li, Christophe Lemoine, Bertrand Vrignon:
Prediction of long-term immunity of a phase-locked loop. LATW 2011: 1-6 - 2010
- [j1]Binhong Li, Alexandre Boyer, Sonia Bendhia, Christophe Lemoine:
Ageing effect on electromagnetic susceptibility of a phase locked loop. Microelectron. Reliab. 50(9-11): 1304-1308 (2010)
2000 – 2009
- 2004
- [c2]Xie Tao, Binhong Li, Wenjun Chen, Yijun He:
The scattering fields of 2-D sea fractal surface with finite conductivity illuminated by ellipse polarization wave. Part One. Scattering fields in Cartesian coordinates. IGARSS 2004: 2772-2775 - [c1]Xie Tao, Yijun He, Binhong Li, Wenjun Chen:
The scattering fields of 2-D sea fractal surface with finite conductivity illuminated by ellipse polarization wave. Part two. Scattering matrix and numerical results. IGARSS 2004: 2776-2779
Coauthor Index
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