"Bias voltage criteria of gate shielding effect for protecting IGBTs from ..."

Masanori Tsukuda et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.06.026

access: closed

type: Journal Article

metadata version: 2020-02-22

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Masanori Tsukuda, Seiya Abe, Kazunori Hasegawa, Tamotsu Ninomiya, Ichiro Omura:
Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena. Microelectron. Reliab. 88-90: 482-485 (2018)

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