"Influence of channel layer and passivation layer on the stability of ..."

Runze Zhan et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.05.007

access: closed

type: Journal Article

metadata version: 2020-02-22

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Runze Zhan, Chengyuan Dong, Po-Tsun Liu, Han-Ping D. Shieh:
Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors. Microelectron. Reliab. 53(12): 1879-1885 (2013)

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