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ORCIDMicroelectronics Reliability, Volume 81
Volume 81, February 2018
- Patrick M. Lenahan, Mark A. Anders, R. J. Waskiewicz, Aivars J. Lelis:
Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance. 1-6 - Philip Y. Chung, Suresh K. Sitaraman:
Random vibration analysis of 3-Arc-Fan compliant interconnects. 7-21 - Chien-Ming Huang, Daniel Nunez, James Coburn, Michael G. Pecht:
Risk of tin whiskers in the nuclear industry. 22-30 - Andreas Kerber, Tanya Nigam:
Bias temperature instability in scaled CMOS technologies: A circuit perspective. 31-40 - Fei Chong Ng, Aizat Abas
, Mohd Zulkifly Abdullah:
Effect of solder bump shapes on underfill flow in flip-chip encapsulation using analytical, numerical and PIV experimental approaches. 41-63 - Norbert Druml, Christoph Ehrenhöfer, Walter Bell, Christian Gailer, Hannes Plank, Thomas Herndl, Gerald Holweg:
A fast and flexible HW/SW co-processing framework for Time-of-Flight 3D imaging. 64-76 - Gady Golan, Moshe Azoulay, Tsuriel Avraham, Ilan Kremenetsky, Joseph B. Bernstein:
An improved reliability model for Si and GaN power FET. 77-89 - Yow-Jon Lin, Cheng-Chun Hung:
Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2Sx treatment. 90-94 - Eduardo Nogueira, Juan Sancho Gil, José-Luis Sánchez-Bote:
Lifetime of electret microphones by thermal degradation analysis via electroacoustic measurements. 95-100 - Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang:
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. 101-111 - Teng Ma, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, Dandan Su, Qi Guo:
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. 112-116 - Wei Yan, Zhinong Yu, Jian Guo, Dawei Shi, Jianshe Xue, Wei Xue:
Recovery behaviors in n-channel LTPS-TFTs under DC stress. 117-120 - Daniel B. Habersat, Aivars J. Lelis, Ronald Green:
Measurement considerations for evaluating BTI effects in SiC MOSFETs. 121-126 - Souvik Mahapatra, Narendra Parihar:
A review of NBTI mechanisms and models. 127-135 - M. Yazdan Mehr, M. R. Toroghinejad, F. Karimzadeh, W. D. van Driel, G. Q. Zhang:
A review on discoloration and high accelerated testing of optical materials in LED based-products. 136-142 - Hao Zhang, Yang Liu, Lingen Wang, Jiajie Fan, Xuejun Fan, Fenglian Sun, Guoqi Zhang:
A new hermetic sealing method for ceramic package using nanosilver sintering technology. 143-149 - Marcelino Dias, Thiago A. Costa, Bismarck Luiz Silva, José E. Spinelli, Noé Cheung, Amauri Garcia:
A comparative analysis of microstructural features, tensile properties and wettability of hypoperitectic and peritectic Sn-Sb solder alloys. 150-158 - Ke Li, Lingyu Wang, Jingjing Wu, Qiuju Zhang, Guanglan Liao, Lei Su:
Using GA-SVM for defect inspection of flip chips based on vibration signals. 159-166 - Shanshan Liu, Pedro Reviriego, Juan Antonio Maestro, Liyi Xiao:
Fault tolerant encoders for Single Error Correction and Double Adjacent Error Correction codes. 167-173 - Mitchell D. Kelley, Bejoy N. Pushpakaran, Argenis V. Bilbao, James A. Schrock, Stephen B. Bayne:
Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET. 174-180 - Tun Wang, Baoming Wang, Aman Haque, Michael Snure, Eric Heller, Nicholas Glavin:
Mechanical stress effects on electrical breakdown of freestanding GaN thin films. 181-185 - Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser:
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. 186-194 - G. Jayaprasad, P. P. Dhanalakshmi, M. Baskaran, S. Hemachandran:
Analysis of low isolation problem in HMC using Ishikawa model: A case study. 195-200 - Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae:
Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack. 201-209 - Maryam Gholamirad, Siavash Soltani, Panthea Sepehrband:
Dislocation assisted diffusion: A mechanism for growth of intermetallic compounds in copper ball bonds. 210-217 - Simon Kennedy, Mehmet Rasit Yuce, Jean-Michel Redoute:
Susceptibility of flash ADCs to electromagnetic interference. 218-225 - Subhadeep Mukhopadhyay, Yung-Huei Lee, Jen-Hao Lee:
Time-zero-variability and BTI impact on advanced FinFET device and circuit reliability. 226-231 - Pham Luu Trung Duong, Nagarajan Raghavan:
Heuristic Kalman optimized particle filter for remaining useful life prediction of lithium-ion battery. 232-243 - James H. Stathis, Souvik Mahapatra, Tibor Grasser:
Controversial issues in negative bias temperature instability. 244-251 - Raimund Ubar, Sergei Kostin, Maksim Jenihhin, Jaan Raik, Lembit Jürimägi:
Fast identification of true critical paths in sequential circuits. 252-261 - Woojin Ahn, Sang Hoon Shin, Chunsheng Jiang, Hai Jiang, M. A. Wahab, Muhammad Ashraful Alam:
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits. 262-273 - Ivo Hálecek, Petr Fiser, Jan Schmidt:
Towards AND/XOR balanced synthesis: Logic circuits rewriting with XOR. 274-286 - Zoran Stamenkovic, Ondrej Novák, Witold A. Pleskacz:
Foreword to the special issue on 20th IEEE international symposium on design and diagnostics of electronic circuits and systems (DDECS2017). 287 - Heng Zhang, Qiang Miao, Xin Zhang, Zhiwen Liu:
An improved unscented particle filter approach for lithium-ion battery remaining useful life prediction. 288-298 - William J. Roesch, Dorothy June M. Hamada:
Discovering and reducing defects in MIM capacitors. 299-305 - Serge Karboyan, Michael J. Uren, Manikant, James W. Pomeroy, Martin Kuball:
On the origin of dynamic Ron in commercial GaN-on-Si HEMTs. 306-311 - Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda:
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. 312-319 - He Wang, Pan Zhao, Hong Yang, Jipeng Chang, Dengyuan Song, Shiyu Sang:
Performance variation of dark current density-voltage characteristics for PID-affected monocrystalline silicon solar modules from the field. 320-327 - Neeraj Khera, Shakeb Ahmad Khan:
Prognostics of aluminum electrolytic capacitors using artificial neural network approach. 328-336 - Lili Ding, Wei Chen, Hongxia Guo, Tan Wang, Rongmei Chen, Yinhong Luo, Fengqi Zhang, Xiaoyu Pan:
Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model. 337-341 - Roberto S. Aga, Eric B. Kreit, Steven R. Dooley, Carrie M. Bartsch, Emily M. Heckman, Rachel S. Aga:
Considerations in printing conductive traces for high pulsed power applications. 342-351 - A. A. El-Daly, A. A. Ibrahiem:
Influence of rotating magnetic field on solidification microstructure and tensile properties of Sn-Bi lead-free solders. 352-361 - Eivind Bardalen, Bjørnar Karlsen, Helge Malmbekk, Muhammad Nadeem Akram, Per Alfred Ohlckers:
Reliability study of fiber-coupled photodiode module for operation at 4 K. 362-367 - Wei-Ting Kary Chien, Atman Yong Zhao, Liwen Zhang, Zhijuan Wang:
Investigations and detections on a new BEOL dielectric failure mechanism at advanced technologies. 368-372 - Lisa Mitterhuber, Stefan Defregger, Julien Magnien, Jördis Rosc, René Hammer, Lena Goullon, Matthias Hutter, Franz Schrank, Stefan Hörth, Elke Kraker:
Thermal transient measurement and modelling of a power cycled flip-chip LED module. 373-380
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