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2020 – today
- 2024
[j10]Junyan Zhu, Jiang Cao
, Chen Song, Bo Li, Zhengsheng Han:
Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism. Comput. Phys. Commun. 302: 109251 (2024)- [c7]Zexin Su, Bo Li, Chang Liu, Xiaohui Su, Qian Luo, Hongyu Ren, Zhengsheng Han:
SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS. ISCAS 2024: 1-5 - 2023
- [c6]Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan:
The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. IRPS 2023: 1-6 - [c5]Xinyi Zhang, Kewei Wang, Fang Wang, Jiangjiang Li, Zhicheng Wu, Duoli Li, Bo Li, Jianhui Bu, Zhengsheng Han:
Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET. IRPS 2023: 1-5 - 2022
- [j9]Xuwei Lin, Weizhong Chen, Haifeng Qin, Hongsheng Zhang, Zhengsheng Han:
A snapback-free RC-LIGBT with separated LIGBT and FWD. IEICE Electron. Express 19(17): 20220300 (2022)
2010 – 2019
- 2019
- [j8]Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Duoli Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han:
Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique. IEEE Access 7: 115989-115996 (2019) - [j7]Weizhong Chen, Yao Huang, Shun Li, Yi Huang, Zhengsheng Han:
A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region. IEEE Access 7: 183589-183595 (2019) - [j6]Fei Hu, Limei Song, Zhengsheng Han, Huan Du, Jiajun Luo:
A new snapback-free base resistance controlled thyristor with semi-superjunction. IEICE Electron. Express 16(8): 20190104 (2019) - [j5]Weizhong Chen, Yao Huang, Shun Li, Lingli Wang, Lijun He, Yi Huang, Zhengsheng Han:
A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO2 layer. IEICE Electron. Express 16(19): 20190445 (2019) - [j4]Fei Hu, Limei Song, Zhengsheng Han, Jiajun Luo:
Snapback-free base resistance controlled thyristor with floating N-region. IEICE Electron. Express 16(21): 20190592 (2019) - [c4]Zhongshan Zheng, Zhentao Li, Bo Li, Jiajun Luo, Zhengsheng Han:
Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells. ASICON 2019: 1-3 - 2018
- [j3]Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang:
Process variation dependence of total ionizing dose effects in bulk nFinFETs. Microelectron. Reliab. 88-90: 946-951 (2018) - [j2]Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin:
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. Microelectron. Reliab. 88-90: 969-973 (2018) - 2017
- [j1]Weizhong Chen, Qiao Guo, Lijun He, Zhengsheng Han, Yuchan Wang, Xiaoyun Li:
A RC-IGBT with built-in free wheeling diode controlled by MOSFET. IEICE Electron. Express 14(19): 20170817 (2017) - [c3]Zhongshan Zheng, Zhentao Li, Gengsheng Chen, Jiajun Luo, Zhengsheng Han:
Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells. ASICON 2017: 219-221 - [c2]Yulong Zhang, Lulu Wang, Bo Gao, Lixin Wang, Jiajun Luo, Zhengsheng Han:
System Analysis and PHM Methods for Power Devices Based on Physics-of-Failure. DSA 2017: 92-97 - 2011
- [c1]Yiqi Wang, Fazhao Zhao, Mengxin Liu, Zhengsheng Han:
A new full current mode sense amplifier with compensation circuit. ASICON 2011: 645-648
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