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2020 – today
- 2024
[j6]Hyunseo You
, Kihoon Nam, Jehyun An, Chanyang Park, Donghyun Kim, Seonhaeng Lee, Namhyun Lee, Rock-Hyun Baek:
Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications. IEEE Access 12: 10988-10994 (2024)- [j5]Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim:
Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning. IEEE Access 12: 23881-23886 (2024) - [c5]Sunhang Lee, Nam-Hyun Lee, G.-J. Kim, J. Ahn, Ik-Hwan Kim, S. Ha, S. Rhee, GH Bae, KW Lee, YS Lee, SB. Ko, S. Pae:
Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology. IRPS 2024: 69 - 2022
- [c4]Nam-Hyun Lee, Sunhang Lee, S.-H. Kim, G.-J. Kim, K. W. Lee, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae:
Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology. IRPS 2022: 6 - 2021
- [c3]Gang-Jun Kim, Moonjee Yoon, SungHwan Kim, Myeongkyu Eo, Shinhyung Kim, Taehun You, Namhyun Lee, Kijin Kim, Sangwoo Pae:
The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress. IRPS 2021: 1-4 - [c2]Donghee Son, Gang-Jun Kim, Jongkyun Kim, Nam-Hyun Lee, Kijin Kim, Sangwoo Pae:
Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM. IRPS 2021: 1-4
2010 – 2019
- 2019
- [c1]Nam-Hyun Lee, Jongkyun Kim, Donghee Son, Kangjun Kim, Jung Eun Seok:
Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAM. IRPS 2019: 1-4 - 2018
- [j4]Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jung Eun Seok, Yunsung Lee:
Effect of DC/AC stress on the reliability of cell capacitor in DRAM. Microelectron. Reliab. 88-90: 179-182 (2018) - [j3]Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jung-Eun Seok, Yunsung Lee:
Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM. Microelectron. Reliab. 88-90: 183-185 (2018) - 2016
- [j2]Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang:
Degradation of pMOSFETs due to hot electron induced punchthrough. Microelectron. Reliab. 59: 13-17 (2016) - [j1]Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang:
Channel width dependence of AC stress on bulk nMOSFETs. Microelectron. Reliab. 64: 194-198 (2016)
Coauthor Index
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