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Jun-Sik Yoon
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- affiliation: Pohang University of Science and Technology, South Korea
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2020 – today
- 2023
- [j13]Kihoon Nam, Chanyang Park, Hyeok Yun, Jun-Sik Yoon, Hyundong Jang, Kyeongrae Cho, Min Sang Park, Hyun-Chul Choi, Rock-Hyun Baek:
Holistic Optimization of Trap Distribution for Performance/Reliability in 3-D NAND Flash Using Machine Learning. IEEE Access 11: 7135-7144 (2023) - [c1]Sandra Maria Shaji, Lingjun Zhu, Jun-Sik Yoon, Sung Kyu Lim:
A Comparative Study on Front-Side, Buried and Back-Side Power Rail Topologies in 3nm Technology Node. ISLPED 2023: 1-6 - 2022
- [j12]Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Junjong Lee, Sanguk Lee, Jaewan Lim, Rock-Hyun Baek:
DC Performance Variations by Grain Boundary in Source/Drain Epitaxy of Sub-3-nm Nanosheet Field-Effect Transistors. IEEE Access 10: 22032-22037 (2022) - [j11]Hyundong Jang, Hyeok Yun, Chanyang Park, Kyeongrae Cho, Kihoon Nam, Jun-Sik Yoon, Hyun-Chul Choi, Rock-Hyun Baek:
Extraction of Device Structural Parameters Through DC/AC Performance Using an MLP Neural Network Algorithm. IEEE Access 10: 64408-64419 (2022) - 2021
- [j10]Jinsu Jeong, Jun-Sik Yoon, Rock-Hyun Baek:
Analysis of TSV-Induced Mechanical Stress and Electrical Noise Coupling in Sub 5-nm Node Nanosheet FETs for Heterogeneous 3D-ICs. IEEE Access 9: 16728-16735 (2021) - [j9]Jun-Sik Yoon, Seunghwan Lee, Hyeok Yun, Rock-Hyun Baek:
Digital/Analog Performance Optimization of Vertical Nanowire FETs Using Machine Learning. IEEE Access 9: 29071-29077 (2021) - [j8]Junjong Lee, Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Sanguk Lee, Rock-Hyun Baek:
Monolithic 3D 6T-SRAM Based on Newly Designed Gate and Source/Drain Bottom Contact Schemes. IEEE Access 9: 138192-138199 (2021) - 2020
- [j7]Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Rock-Hyun Baek:
Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application. IEEE Access 8: 35873-35881 (2020) - [j6]Hyun-Chul Choi, Hyeok Yun, Jun-Sik Yoon, Rock-Hyun Baek:
Neural Approach for Modeling and Optimizing Si-MOSFET Manufacturing. IEEE Access 8: 159351-159370 (2020) - [j5]Jun-Sik Yoon, Rock-Hyun Baek:
Device Design Guideline of 5-nm-Node FinFETs and Nanosheet FETs for Analog/RF Applications. IEEE Access 8: 189395-189403 (2020) - [j4]Jun-Sik Yoon, Rock-Hyun Baek:
A Novel Sub-5-nm Node Dual-Workfunction Folded Cascode Nanosheet FETs for Low Power Mobile Applications. IEEE Access 8: 196975-196978 (2020)
2010 – 2019
- 2019
- [j3]Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Rock-Hyun Baek:
Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain. IEEE Access 7: 38593-38596 (2019) - [j2]Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Rock-Hyun Baek:
Bottom Oxide Bulk FinFETs Without Punch-Through-Stopper for Extending Toward 5-nm Node. IEEE Access 7: 75762-75767 (2019) - [j1]Jun-Sik Yoon, Seunghwan Lee, Junjong Lee, Jinsu Jeong, Hyeok Yun, Bohyeon Kang, Rock-Hyun Baek:
Source/Drain Patterning FinFETs as Solution for Physical Area Scaling Toward 5-nm Node. IEEE Access 7: 172290-172295 (2019)
Coauthor Index
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