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ORCIDZhengxuan Zhang
This is just a disambiguation page, and is not intended to be the bibliography of an actual person. Any publication listed on this page has not been assigned to an actual author yet. If you know the true author of one of the publications listed below, you are welcome to contact us.
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2020 – today
- 2024
[j33]Weixing Mai
, Zhengxuan Zhang, Yifan Chen, Kuntao Li, Yun Xue:
GeDa: Improving training data with large language models for Aspect Sentiment Triplet Extraction. Knowl. Based Syst. 301: 112289 (2024)- [j32]Zhengxuan Zhang, Jianying Chen, Xuejie Liu, Weixing Mai, Qianhua Cai:
'What' and 'Where' both matter: dual cross-modal graph convolutional networks for multimodal named entity recognition. Int. J. Mach. Learn. Cybern. 15(6): 2399-2409 (2024) - [j31]Weixing Mai, Zhengxuan Zhang, Kuntao Li, Yun Xue, Fenghuan Li:
Dynamic Graph Construction Framework for Multimodal Named Entity Recognition in Social Media. IEEE Trans. Comput. Soc. Syst. 11(2): 2513-2522 (2024) - [j30]Zhixun Qiu, Kehai Chen, Yun Xue, Zhihao Ma, Zhengxuan Zhang:
Modeling Inter-Aspect Relations With Clause and Contrastive Learning for Aspect-Based Sentiment Analysis. IEEE Trans. Comput. Soc. Syst. 11(2): 2833-2842 (2024) - 2023
- [j29]Haineng Zhang, Zhongyang Liu, Dawei Bi, Zhengxuan Zhang, Zhiyi Xiao, Ruofan Dai:
An energy-efficient level shifter based on a differential cascade voltage switch structure. Int. J. Circuit Theory Appl. 51(2): 955-962 (2023) - [j28]Zhongyang Liu, Yuqiao Xie, Tao Xu, Qing Liu, Dawei Bi, Zhiyuan Hu, Shichang Zou, Zhengxuan Zhang:
A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application. Int. J. Circuit Theory Appl. 51(8): 3938-3948 (2023) - [j27]Yuqiao Xie, Zhongyang Liu, Tao Xu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou:
A novel high-precision single-event transient hardened voltage comparator design. Int. J. Circuit Theory Appl. 51(10): 4864-4878 (2023) - [j26]Jianying Chen, Yun Xue, Haolan Zhang, Weiping Ding, Zhengxuan Zhang, Jiehai Chen:
On development of multimodal named entity recognition using part-of-speech and mixture of experts. Int. J. Mach. Learn. Cybern. 14(6): 2181-2192 (2023) - [c2]Zhengxuan Zhang, Weixing Mai, Haoliang Xiong, Chuhan Wu, Yun Xue:
A Token-wise Graph-based Framework for Multimodal Named Entity Recognition. ICME 2023: 2153-2158 - 2022
- [j25]Xuwang Liu, Zhengxuan Zhang, Wei Qi:
The Strategy Analysis of Grouped Bid Evaluation in Reverse Auction: A Tripartite Evolutionary Game Perspective. IEEE Syst. J. 16(1): 88-99 (2022) - [j24]Zhongyang Liu, Haineng Zhang, Jianwei Jiang, Yanjie Jia, Yuqiao Xie, Shichang Zou, Zhengxuan Zhang:
A High-Performance and Low-Cost Single-Event Multiple-Node-Upsets Resilient Latch Design. IEEE Trans. Very Large Scale Integr. Syst. 30(12): 1867-1877 (2022) - 2021
- [j23]Haineng Zhang, Zhongyang Liu, Yuqiao Xie, Yanjie Jia, Zhengxuan Zhang:
A radiation-hardened 14T SRAM cell for highly reliable space application. IEICE Electron. Express 18(24): 20210404 (2021) - 2020
- [j22]Xuwang Liu, Zhengxuan Zhang, Wei Qi, Dingwei Wang:
An Evolutionary Game Study of the Behavioral Management of Bid Evaluations in Reserve Auctions. IEEE Access 8: 95390-95402 (2020) - [j21]Huilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou:
Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET. IEICE Electron. Express 17(7): 20200001 (2020)
2010 – 2019
- 2019
- [j20]Xin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou:
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer. IEICE Electron. Express 16(21): 20190454 (2019) - [j19]Xuwang Liu, Zhengxuan Zhang, Wei Qi, Dingwei Wang:
Behavior Analysis With an Evolutionary Game Theory Approach for Procurement Bid Evaluation Involving Technical and Business Experts. IEEE Syst. J. 13(4): 4374-4385 (2019) - 2018
- [j18]Dianpeng Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel highly reliable and low-power radiation hardened SRAM bit-cell design. IEICE Electron. Express 15(3): 20171129 (2018) - [j17]Zhiyuan Hu, Lihua Dai, Zhengxuan Zhang, Xiaoyun Li, Shichang Zou:
Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide. IEICE Electron. Express 15(4): 20171236 (2018) - [j16]Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel SEU tolerant memory cell for space applications. IEICE Electron. Express 15(17): 20180656 (2018) - [j15]Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel self-recoverable and triple nodes upset resilience DICE latch. IEICE Electron. Express 15(19): 20180753 (2018) - [c1]Zhengxuan Zhang, Jing Dong, Dongsheng Zhou, Xiaoyong Fang, Xiaopeng Wei:
Improved Modular Convolution Neural Network for Human Pose Estimation. Edutainment 2018: 378-388 - 2017
- [j14]Lei Song, Zhiyuan Hu, Mengying Zhang, Xiaonian Liu, Lihua Dai, Zhengxuan Zhang, Shichang Zou:
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology. Microelectron. Reliab. 74: 1-8 (2017) - [j13]Lihua Dai, Xiaonian Liu, Mengying Zhang, Leqing Zhang, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, Shichang Zou:
Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs. Microelectron. Reliab. 74: 74-80 (2017) - [j12]Chao Peng, Yunfei En, Zhengxuan Zhang, Yuan Liu, Zhifeng Lei:
Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs. Microelectron. Reliab. 75: 135-141 (2017) - 2016
- [j11]Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng, Lei Song, Lihua Dai:
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs. Microelectron. Reliab. 56: 1-9 (2016) - [j10]Huixiang Huang, Yanyan Huang, Jiachun Zheng, Sufen Wei, Kai Tang, Dawei Bi, Zhengxuan Zhang:
Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation. Microelectron. Reliab. 57: 1-9 (2016) - 2014
- [j9]Huixiang Huang, Dawei Bi, Zhengxuan Zhang:
Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment. Microelectron. J. 45(6): 759-766 (2014) - [j8]Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi:
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation. Microelectron. Reliab. 54(4): 730-737 (2014) - 2013
- [j7]Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou:
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs. Microelectron. J. 44(2): 86-93 (2013) - [j6]Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou:
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. Microelectron. Reliab. 53(2): 259-264 (2013) - 2012
- [j5]Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou:
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. Microelectron. Reliab. 52(1): 130-136 (2012) - 2011
- [j4]Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou:
Impact of within-wafer process variability on radiation response. Microelectron. J. 42(6): 883-888 (2011) - [j3]Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Dawei Bi, Shichang Zou:
The impact of total ionizing radiation on body effect. Microelectron. J. 42(12): 1396-1399 (2011) - [j2]Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou:
Comparison of TID response in core, input/output and high voltage transistors for flash memory. Microelectron. Reliab. 51(6): 1148-1151 (2011) - [j1]Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou:
Total ionizing dose effects in elementary devices for 180-nm flash technologies. Microelectron. Reliab. 51(8): 1295-1301 (2011)
Coauthor Index
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