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ORCIDRonald D. Schrimpf
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- affiliation: Vanderbilt University, Nashville, TN, USA
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2020 – today
- 2024
[c6]En Xia Zhang
, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood:
Charge Trapping in Irradiated 3D Devices and ICs (Invited). IRPS 2024: 10- 2023
- [c5]Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck:
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. DRC 2023: 1-2 - 2021
- [c4]Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf:
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. ASICON 2021: 1-4
2010 – 2019
- 2018
- [j15]Alexandre Simionovski, Gilson I. Wirth, Ronald D. Schrimpf, Bharat L. Bhuva:
A TCAD evaluation of a single Bulk-BICS with integrative memory cell. Microelectron. J. 80: 62-68 (2018) - 2015
- [c3]Balaji Narasimham, Jung K. Wang, Narayana Vedula, Saket Gupta, Brandon Bartz, Carl Monzel, Indranil Chatterjee, Bharat L. Bhuva, Ronald D. Schrimpf, Robert A. Reed:
Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs. IRPS 2015: 2 - [c2]A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, A. R. Arehart:
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. IRPS 2015: 2 - 2014
- [j14]Aditya Kalavagunta, Shubhajit Mukherjee, Robert A. Reed, Ronald D. Schrimpf:
Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs. Microelectron. Reliab. 54(3): 570-574 (2014) - [j13]Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis:
Total-ionizing-dose effects and reliability of carbon nanotube FET devices. Microelectron. Reliab. 54(11): 2355-2359 (2014) - 2013
- [j12]Nihaar N. Mahatme, Indranil Chatterjee, Akash Patki, Daniel B. Limbrick, Bharat L. Bhuva, Ronald D. Schrimpf, William H. Robinson:
An efficient technique to select logic nodes for single event transient pulse-width reduction. Microelectron. Reliab. 53(1): 114-117 (2013) - 2012
- [j11]Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li:
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. Microelectron. Reliab. 52(11): 2521-2526 (2012) - 2011
- [j10]Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides:
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. Microelectron. Reliab. 51(2): 212-216 (2011) - [j9]Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby:
The sensitivity of radiation-induced leakage to STI topology and sidewall doping. Microelectron. Reliab. 51(5): 889-894 (2011) - [j8]R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné:
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51(12): 2093-2096 (2011)
2000 – 2009
- 2009
- [c1]Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, Sergey N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf:
Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling. ESSCIRC 2009: 76-83 - 2008
- [j7]Federico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael L. McLain, Ronald D. Schrimpf:
Total ionizing dose effects in shallow trench isolation oxides. Microelectron. Reliab. 48(7): 1000-1007 (2008) - 2007
- [j6]Sokrates T. Pantelides, L. Tsetseris, Sergey N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf:
Hydrogen in MOSFETs - A primary agent of reliability issues. Microelectron. Reliab. 47(6): 903-911 (2007) - [j5]Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf, Sokrates T. Pantelides:
Effects of device aging on microelectronics radiation response and reliability. Microelectron. Reliab. 47(7): 1075-1085 (2007) - 2006
- [j4]A. M. Albadri, Ronald D. Schrimpf, Kenneth F. Galloway, D. Greg Walker:
Single event burnout in power diodes: Mechanisms and models. Microelectron. Reliab. 46(2-4): 317-325 (2006) - 2005
- [j3]P. C. Adell, Ronald D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, Hugh J. Barnaby, O. Mion:
Single event transient effects in a voltage reference. Microelectron. Reliab. 45(2): 355-359 (2005) - 2001
- [j2]Loren J. Wise, Ronald D. Schrimpf, Harold G. Parks, Kenneth F. Galloway:
A generalized model for the lifetime of microelectronic components, applied to storage conditions. Microelectron. Reliab. 41(2): 317-322 (2001) - [j1]D. Greg Walker, T. S. Fisher, J. Liu, Ronald D. Schrimpf:
Thermal modeling of single event burnout failure in semiconductor power devices. Microelectron. Reliab. 41(4): 571-578 (2001)
Coauthor Index
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