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Kazukiyo Joshin
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2010 – 2019
- 2017
- [j5]Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin:
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. 100-C(5): 417-423 (2017) - 2015
- [c3]Ken-ichi Kitayama, Yuki Yoshida
, Yuya Yamaguchi, Hirochika Nakajima, Kohsuke Nishimura, Abdelmoula Bekkali, Masayuki Oishi, Hidenori Iwai, Kazuya Ota, Norihiko Sato, Naoyasu Kamiya, Keiji Tanaka, Yoichi Oikawa, Kazukiyo Joshin, Nobuhiko Shibagaki, Kaoru Higuma, Satoshi Oikawa, Junichiro Ichikawa, Atsushi Kanno, Tetsuya Kawanishi:
High-Speed Optical and Millimeter-Wave Wireless Link for Disaster Recovery. GLOBECOM Workshops 2015: 1-6 - 2014
- [j4]Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe:
Millimeter-Wave GaN HEMT for Power Amplifier Applications. IEICE Trans. Electron. 97-C(10): 923-929 (2014)
2000 – 2009
- 2009
- [c2]Yoichi Kawano, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin:
A 77GHz transceiver in 90nm CMOS. ISSCC 2009: 310-311 - 2008
- [j3]Kazukiyo Joshin:
Special Section on Microwave and Millimeter-wave Technologies. IEICE Trans. Electron. 91-C(11): 1719 (2008) - [c1]Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin:
60 and 77GHz Power Amplifiers in Standard 90nm CMOS. ISSCC 2008: 562-563 - 2006
- [j2]Toshihide Kikkawa, Kazukiyo Joshin:
High Power GaN-HEMT for Wireless Base Station Applications. IEICE Trans. Electron. 89-C(5): 608-615 (2006) - 2003
- [j1]Satoshi Masuda, Tsuyoshi Takahashi, Kazukiyo Joshin:
An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system. IEEE J. Solid State Circuits 38(9): 1479-1484 (2003)
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