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Publication search results
found 44 matches
- 2024
- Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3 - Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng
:
Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. IRPS 2024: 1-5 - Pramoda Vishnumurthy, Ruben Alcala, Thomas Mikolajick
, Uwe Schroeder, Luis Azevedo Antunes, Alfred Kersch
:
Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited). IRPS 2024: 1-10 - 2023
- Maximilian W. Feil
, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher
, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10 - Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, Thomas Magis, Carine Jahan, François Andrieu, Jean Coignus:
Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). IRPS 2023: 1-8 - Christian Schwabe, Xing Liu, Tobias N. Wassermann, Paul Salmen, Thomas Basler
:
SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation. IRPS 2023: 1-6 - 2022
- James Farmer
, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao
, Al-Moatasem El-Sayed, Thomas Durrant
, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. IRPS 2022: 36-1 - Maximilian W. Feil
, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser:
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. IRPS 2022: 3 - Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour:
DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited). IRPS 2022: 11 - Ivana Kovacevic-Badstuebner, Salvatore Race, Thomas Ziemann, Shweta Tiwari, Ulrike Grossner
, Elena Mengotti, Enea Bianda, Joni P. A. Jormanainen:
Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages. IRPS 2022: 10 - Vinayak Bharat Naik, J. H. Lim, Kazutaka Yamane, J. Kwon, Behin-Aein B., N. L. Chung, S. K, R. Chao, C. Chiang, Y. Huang, L. Pu, Yuichi Otani, Suk Hee Jang, Nivetha Balasankaran, Wah-Peng Neo, T. Ling, Jia Wen Ting, Hongsik Yoon, Johannes Müller, Bert Pfefferling, Oliver Kallensee, Thomas Merbeth, Chim Seng Seet, J. Wong, Y. S. You, Steven Soss, T. H. Chan, S. Y. Siah:
Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities. IRPS 2022: 6 - Taras Ravsher
, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar:
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. IRPS 2022: 10-1 - Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe
, Lukas M. Eng
:
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. IRPS 2022: 11-1 - 2021
- Judith Berens, Thomas Aichinger:
A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs. IRPS 2021: 1-5 - Robert L. Bruce, Syed Ghazi Sarwat
, Irem Boybat, Cheng-Wei Cheng, Wanki Kim, S. R. Nandakumar, Charles Mackin
, Timothy Philip, Zuoguang Liu, Kevin Brew, Nanbo Gong, Injo Ok, Praneet Adusumilli, Katie Spoon, Stefano Ambrogio, Benedikt Kersting, Thomas Bohnstingl, Manuel Le Gallo, Andrew Simon, Ning Li, Iqbal Saraf, Jin-Ping Han, Lynne M. Gignac, John M. Papalia, Tenko Yamashita, Nicole Saulnier, Geoffrey W. Burr, Hsinyu Tsai, Abu Sebastian
, Vijay Narayanan
, Matthew BrightSky:
Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation. IRPS 2021: 1-6 - James Farmer
, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao
, Al-Moatasem El-Sayed, Thomas Durrant
, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Mitigating switching variability in carbon nanotube memristors. IRPS 2021: 1-4 - Halid Mulaosmanovic
, Patrick D. Lomenzo, Uwe Schroeder
, Stefan Slesazeck, Thomas Mikolajick
, Benjamin Max:
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. IRPS 2021: 1-6 - Thomas Neyer, Martin Domeij, Hrishikesh Das, Swapna Sunkari:
Is there a perfect SiC MosFETs Device on an imperfect crystal? IRPS 2021: 1-6 - Shanmuganathan Palanisamy, Thomas Basler
, Josef Lutz
, Cesare Künzel, Larissa Wehrhahn-Kilian, Rudolf Elpelt:
Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density. IRPS 2021: 1-6 - Salvatore Race, Thomas Ziemann, Shweta Tiwari, Ivana Kovacevic-Badstuebner, Ulrike Grossner
:
Accuracy of Thermal Analysis for SiC Power Devices. IRPS 2021: 1-5 - Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais
, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic:
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS 2021: 1-6 - Paul Salmen, Maximilian W. Feil
, Katja Waschneck, Hans Reisinger, Gerald Rescher
, Thomas Aichinger:
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. IRPS 2021: 1-7 - Maria Toledano-Luque, Peter C. Paliwoda, Mohamed Nour, Thomas Kauerauf, Byoung Min, Germain Bossu, Mahesh Siddabathula, Tanya Nigam:
Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area. IRPS 2021: 1-6 - 2020
- Thomas Aichinger, Matthias Schmidt:
Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs. IRPS 2020: 1-6 - Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer
, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe
, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng
:
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS 2020: 1-9 - Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher
, Christian Schleich
, Tibor Grasser:
Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS 2020: 1-7 - Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher
:
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. IRPS 2020: 1-6 - Shanmuganathan Palanisamy
, Josef Lutz
, R. Boldyrjew-Mast, Thomas Basler
:
Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress. IRPS 2020: 1-6 - Nikolaos Papandreou, Haralampos Pozidis, Nikolas Ioannou, Thomas P. Parnell, Roman A. Pletka
, Milos Stanisavljevic, Radu Stoica, Sasa Tomic, Patrick Breen, Gary A. Tressler, Aaron Fry, Timothy Fisher, Andrew Walls:
Open Block Characterization and Read Voltage Calibration of 3D QLC NAND Flash. IRPS 2020: 1-6 - P. Srinivasan, Paul Colestock, Thomas Samuels, Stephen Moss, Fernando Guarin, Byoung Min:
A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications. IRPS 2020: 1-4
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